“…At HT, a significant fraction of the oxygen reacting at the metal/oxide interface diffuses through the metallic substrate. Once the solubility limit of oxygen in the βZr phase is reached, a metallic layer of oxygen-stabilized αZr phase, called αZr(O), grows from the interface between the oxide layer and the βZr phase substrate [1][2] [3]. There is a strong through-thickness gradient in oxygen concentration, from ~7 wt.% at the oxide/αZr(O) interface down to 2 wt.% at the αZr(O)/βZr interface and not higher than 0.6 wt.% in the βZr phase.…”