Oxidation of NiCr and NiCrFe alloys at room temperature

Steffen, J.; Hofmann, S.

doi:10.1002/sia.740111207

Cited by 57 publications

(17 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…However, these effects are thought to be incorporated in the semi-empirical Q values determined earlier [4]. Note also that here the preferential sputtering is sufficient to reduce the average composition seen by AES [36,[38][39][40] to Ta 2 O 4 at the higher ion energies and Ta 2 O 3 at the lower energies, and similarly by XPS [41]. Incidentally, the calculation leading to figure 1 also predicts a composition of Ta 2 O 3 for the altered layer.…”

Section: The Ta 2 O 5 Sputtering Yield Datamentioning

confidence: 88%

Sputtering yields of compounds using argon ions

Seah¹,

Nunney²

2010

J. Phys. D: Appl. Phys.

122

View full text Add to dashboard Cite

Abstract. An analysis is made of published sputtering yield data for compounds using argon primary ions at normal incidence to evaluate the validity of simple predictive equations. These are sputtering yields at dynamical equilibrium. First, two archetypal compounds are analysed: GaAs with constituent elements of similar atomic number and weak preferential sputtering, and Ta 2 O 5 with constituent elements of widely separate atomic number and strong preferential sputtering. The agreements of the sputtering yields predicted by the semi-empirical linear cascade theory are excellent when the appropriate parameters are interpolated, rather than using an average atomic number. The effect of preferential sputtering is included within the framework of the simple pair-bond theory. The average ratios of the data to the initial predictions for GaAs and Ta 2 O 5 are 1.01 ± 0.06 and 1.00 ± 0.07, respectively. Extension of this analysis to a range of oxides shows that the heat of reaction of the oxidation process needs inclusion. It is here that the effect of preferential sputtering can lead to an expansion of the uncertainties. SiO 2 is often used as a reference material and so the published yield data are analysed in detail. These show an extremely broad scatter and so new experimental data are measured. These new results are in the upper range of previous data and correlate with the semiempirical theory with a scatter of only 9%. These correlations show that the semi-empirical linear cascade theory is excellent for predicting the energy dependence of the yield and can be excellent for absolute yields where the compound heat of formation is low.

show abstract

Section: The Ta 2 O 5 Sputtering Yield Datamentioning

confidence: 88%

Sputtering yields of compounds using argon ions

Seah¹,

Nunney²

2010

J. Phys. D: Appl. Phys.

122

View full text Add to dashboard Cite

show abstract

“…1,2 However, the preferential oxidation of Cr is known to occur at temperatures of 300°C or lower in air or with no protective layer, [3][4][5][6] leading to an increase in resistivity. 1,2 However, the preferential oxidation of Cr is known to occur at temperatures of 300°C or lower in air or with no protective layer, [3][4][5][6] leading to an increase in resistivity.…”

Section: Introductionmentioning

confidence: 99%

Thin-film resistor fabrication for InP technology applications

Kopf¹,

Melendes²,

Jacobson³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inDevelopment of magnetoresistive thin film sensor for magnetic field sensing applications AIP Conf. Proc. 1512, 30 (2013); 10.1063/1.4790897 Low emissivity high-temperature tantalum thin film coatings for silicon devices J. Vac. Sci. Technol. A 31, 011501 (2013); 10.1116/1.4766295Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO 2 ∕ Si substrates by dc sputtering technique

show abstract

“…9 in Ref. 4) indicates that actually a pure chromium oxide layer (100%) covers the al10y.l~ This is probably not the case for FrCrl9Ni9 (Fig. 6) because iron may compete with chromium in oxygen capturing owing to its high alloy concentration and relatively strong oxygen affinity.…”

Section: Resultsmentioning

confidence: 96%

Quantitative studies of the initial oxidation stages of FeCrNi alloys using factor analysis and least‐squares fitting methods applied to low‐energy AES spectra

Steffen

Hofmann

1992

Surface & Interface Analysis

Self Cite

View full text Add to dashboard Cite

The oxidation behaviour of the alloys F e 1 9 at.% Cr-9 at.% Ni and Ni-40 at.% Fe-20 at.% Cr was studied in situ at room temperature and oxygen pressures below lo-' Pa by AES using low-energy M,,VY transitions between 20 and 70 eV. Quantitative determination of the relevant components by factor analysis and least-squares fitting methods enabled a much more detailed analysis of the initial oxidation stages as compared to earlier studies. For all alloy elements, factor analysis revealed the presence of an intermediate chemical state before oxidation which is due to binding with chemisorbed oxygen. Least-squares fitting with standrd spectra of the pure elements in their metallic, oxidic and intermediate states disclosed the sequential oxidation of Cr, Fe and Ni with increasing oxygen exposure. Preferential oxygen chemisorption on Cr and oxidation of Cr is accompanied by oxygen-induced segregation and is followed by Fe and Ni oxidation on top of the previously formed oxide for the Ni-rich alloy. Nickel oxidation is drastically reduced in Fe-rich alloys. After exposure to 900 L of oxygen, oxidation results in a layered structure as confirmed by AES sputter depth profiles which can be resolved into oxide and pure metal components. Together with the small electron escape depth of only 2-4 atomic layers, this procedure gives wellresolved depth distributions within the total oxide thickness of -6-7 monolayers for NiFe4OCrZO and 11-12 monolayers for FeCrl9Ni9.

show abstract

Oxidation of NiCr and NiCrFe alloys at room temperature

Cited by 57 publications

References 27 publications

Sputtering yields of compounds using argon ions

Sputtering yields of compounds using argon ions

Thin-film resistor fabrication for InP technology applications

Quantitative studies of the initial oxidation stages of FeCrNi alloys using factor analysis and least‐squares fitting methods applied to low‐energy AES spectra

Contact Info

Product

Resources

About