Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering

Dorri, Samira; Pališaitis, Justinas; Greczyński, Grzegorz; Petrov, I.; Birch, Jens; Hultman, Lars; Bakhit, Babak

doi:10.1016/j.corsci.2022.110493

Cited by 26 publications

(4 citation statements)

References 88 publications

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“…Therefore, the x values were >1 for all the (ZrBSiTa)N x films. ZrB y , as well as TiB y [38], tended to form overstoichiometric diboride thin films through sputtering [26]. In our previous study [39], a ZrB 2.5 (28.4% Zr-70.5% B-1.1% O) film was fabricated using a ZrB 2 target.…”

Section: Chemical Compositions and Phase Structures Of Zrbsita And (Z...mentioning

confidence: 99%

Characterization of ZrBSiTaNx Films

Yeh,

Chang,

Chen

2024

Coatings

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In this study, ZrBSiTa and (ZrBSiTa)Nx films were deposited on silicon wafers through direct current magnetron cosputtering. The nitrogen flow ratio (RN2) of the reactive gas and the sputter power applied to the Si target (PSi) were the variables in the fabricating processes. The influence of the N and Si contents on the mechanical properties, thermal stability, and oxidation behavior of the ZrBSiTa and (ZrBSiTa)Nx films were investigated. All the as-fabricated films exhibited amorphous structures. The RN2 set at 0.1, 0.2, and 0.4 caused the ZrBSiTaNx films to exhibit high N contents of 52–55, 62–64, and 63–64 at.%, respectively. The Si content of the ZrBSiTa films increased from 0 to 42 at.% as PSi increased from 0 to 150 W, and this was accompanied by decreases in hardness and Young’s modulus values from 19.1 to 14.3 GPa and 264 to 242 GPa, respectively. In contrast, the increase in Si content of the (ZrBSiTa)Nx films from 0 to 21 at.% increased the hardness from 11.5 to 14.0 GPa, and Young’s modulus from 207 to 218 GPa. Amorphous BN and SiNx phases in the (ZrBSiTa)Nx films varied the structural and mechanical properties. The thermal stability of the (ZrBSiTa)Nx films was evaluated by annealing at 800–900 °C for 10–30 min in Ar. The oxidation behavior of the (ZrBSiTa)Nx films was evaluated in the ambient air at 800 °C for 0.5–24 h. The amorphous (ZrBSiTa)Nx films with a high Si content had high thermal stability and oxidation resistance.

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Section: Chemical Compositions and Phase Structures Of Zrbsita And (Z...mentioning

confidence: 99%

Characterization of ZrBSiTaNx Films

Yeh,

Chang,

Chen

2024

Coatings

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“…Therefore, the Ni 3+ content was adjusted to achieve the optimal conditions of improved transmittance, resistivity, crystallinity, and mobility. With regard to adjusting the properties of thin films, recent vacuum studies report various techniques such as sputtering targets with different microstructures, decreasing the heating rate, co-sputtering, and post-annealing [21][22][23][24].…”

Section: Of 21mentioning

confidence: 99%

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

Kim,

Hong

2023

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In this study, NiO films were fabricated through radio frequency sputtering with various oxygen flow rates and processed via rapid thermal annealing under Ar, O2, and N2 atmospheres. The electrical, optical, and crystallographic properties of the NiO films were influenced by their oxygen content in each film. As the oxygen content, carrier concentration, and resistivity increased, transmittance and mobility decreased. The carrier mobility of the NiO film in the p-type layer of the photodetector requires improvement. Rapid thermal annealing (RTA) has been widely used to improve the crystallinity and mobility of films. However, the reduction in oxygen content during RTA causes a decrease in the carrier concentration and transmittance of NiO films. Regarding the aim of preventing a reduction in oxygen content in the NiO films due to the RTA process, an O2 atmosphere (compared with Ar and N2 atmospheres) was identified as the optimal condition for mobility (3.42 cm2/V·s) and transmittance (50%).

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“…However, SLs research on TM diborides is an unexplored area despite extensive studies over the last decades on monolithic TM diboride thin films. Single layer diborides show high mechanical strength [25][26][27], oxidation and corrosion resistance [28][29][30], relatively low electrical resistivity [31][32][33][34], tribological properties [35,36], and high thermal and chemical stability [32,37]. Comparing to nitride and carbide SLs with cubic structures, there are fewer possibilities for heteroepitaxy to grow SLs from two diboride materials with hexagonal crystal structures.…”

Section: Introductionmentioning

confidence: 99%

Magnetron Sputter Epitaxy of CrB2/TiB2 Diboride Superlattice Thin Films

Dorri

2024

Linköping Studies in Science and Technology. Licentiate Thesis

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Artificial superlattices with their exceptional properties have been popular in a broad range of applications such as electronic, magnetic, optical, and hard coating. Another potential application for single crystal artificial superlattices is highly efficient interference neutron optics, owing to an ultimate interface width of just ±½ atomic layer. Moreover, studies of superlattices have been instrumental in understanding the hardening mechanisms in transition metal nitrides and carbides while such studies on transition metal diborides is lacking, despite extensive studies on monolithic transition metal diboride thin films. This work is an initiative to grow CrB2/TiB2 (0001) diboride superlattices epitaxially onto Al2O3 (0001) substrates by direct current magnetron sputter epitaxy implementing two different approaches; compound diboride targets, and co-sputtering of a metal target with a compound target. Effects of substrate temperature, B stoichiometry (B/TM ratio), modulation period Λ = DCrB2 + DTiB2, layer thickness ratio Γ = D TiB2 D CrB2+ D TiB2, and relative applied power to magnetrons on the structural and interface quality of superlattices are studied and discussed.Using compound targets, superlattices with thickness ratio Γ = 0.3 and modulation periods Λ between 1 and 10 nm, and with Λ = 6 nm and thickness ratios between 0.2 to 0.8 were synthesized at the optimum sputter gas pressure of pAr = 4 mTorr and a substrate temperature of 600 °C. It is found that superlattices with Λ = 6 nm and Γ in the range of 0.2-0.4 exhibit the highest structural quality. However, B segregation in the over-stoichiometric TiBy layers (y > 2), grown from TiB2 compound target, results in narrow epitaxial superlattice columnar growth with structurally distorted B-rich boundaries. By co-sputtering from Ti and TiB2 targets, y could be reduced from 3.3 to 0.9 in TiBy layers through controlling the relative applied target power. Co-sputtered TiBy single layers and superlattices were grown at substrate temperatures between 600 and 900 °C. 300-nm-thick TiB2.3 single layers grown at 750 °C exhibited epitaxial domains about 10x larger than non-co-sputtered films. A significant enhancement for close-tostoichiometry CrB1.7/TiB2.3 superlattices with modulation periods Λ = 6 nm was achieved at 750 °C. X-ray diffraction, time of flight elastic recoil detection analysis, scanning transmission electron microscopy, electron energy loss spectroscopy, selected area electron diffraction, and nano-indentation are used for characterization. PrefaceThis licentiate thesis is a part of my PhD study under the supervision of Prof.

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Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering

Cited by 26 publications

References 88 publications

Characterization of ZrBSiTaNx Films

Characterization of ZrBSiTaNx Films

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

Magnetron Sputter Epitaxy of CrB2/TiB2 Diboride Superlattice Thin Films

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