Abstract:In this study, ZrBSiTa and (ZrBSiTa)Nx films were deposited on silicon wafers through direct current magnetron cosputtering. The nitrogen flow ratio (RN2) of the reactive gas and the sputter power applied to the Si target (PSi) were the variables in the fabricating processes. The influence of the N and Si contents on the mechanical properties, thermal stability, and oxidation behavior of the ZrBSiTa and (ZrBSiTa)Nx films were investigated. All the as-fabricated films exhibited amorphous structures. The RN2 set… Show more
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