Oxidant effect of La(NO3)3·6H2O solution on the crystalline characteristics of nanocrystalline ZrO2 films grown by atomic layer deposition

Oh, Nam Khen; Kim, Jin‐Tae; Kang, Goru; An, Jong-Ki; Nam, Minwoo; Kim, So Yeon; Park, In Sung; Yun, Ju‐Young

doi:10.1016/j.apsusc.2016.10.111

Cited by 9 publications

(4 citation statements)

References 42 publications

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“…The XRD results indicate that the HfO x existed in the monoclinic phase in the films, and the XPS results show that the La content was below the detection limit. Thus, we conclude that La in LNS is not affected by the chemical reaction with TEMAH, as observed for a ZrO 2 film prepared using LNS [ 10 ]. As a consequence, it can also be concluded that the HfO x deposited using LNS is probably not ferroelectric.…”

Section: Resultssupporting

confidence: 69%

“…Most of the diffraction peaks of the HfO x films prepared using LNS and H 2 O can be assigned to the monoclinic phase (JCPDS 06-0318), in agreement with the ALD results reported in the literature ( Figure 3 ) [ 13 ]. The result was different from that in the case of ZrO 2 , the phase structure of which changed from a tetragonal phase to a monoclinic phase when LNS was used [ 10 ]. For the HfO x films prepared with H 2 O, the normal direction of the (

) plane at 28.9° was the preferred orientation, as can be clearly seen in the XRD pattern in Figure 3 .…”

Section: Resultsmentioning

confidence: 78%

“…In addition to the precursor and oxidant, the catalyst can strongly affect the deposition properties and material characteristics of films grown by ALD. To fabricate ZrO 2 films, Oh et al used La(NO 3 ) 3 ∙6H 2 O solution instead of H 2 O as an oxidant and compared the crystalline phase, grain size, and surface roughness of the resulting ZrO 2 films [ 10 ]. Interestingly, use of the La(NO 3 ) 3 ∙6H 2 O solution increased the ZrO 2 film growth rate because of a catalytic effect of the La-based oxidant.…”

Section: Introductionmentioning

confidence: 99%

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Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

et al. 2021

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Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. The atomic layer deposition (ALD) conditions were optimized, and the chemical state, surface morphology, and microstructure of the prepared films were characterized. Furthermore, to better understand the effects of LNS on the deposition process, HfOx films deposited using a conventional oxidant (H2O) were also prepared. The ALD process using LNS was observed to be self-limiting, with an ALD temperature window of 200–350 °C and a growth rate of 1.6 Å per cycle, two times faster than that with H2O. HfOx films deposited using the LNS oxidant had smaller crystallites than those deposited using H2O, as well as more suboxides or defects because of the higher number of grain boundaries. In addition, there was a difference in the preferred orientations of the HfOx films deposited using LNS and H2O, and consequently, a difference in surface energy. Finally, a film growth model based on the surface energy difference was proposed to explain the observed growth rate and crystallite size trends.

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Section: Resultssupporting

confidence: 69%

) plane at 28.9° was the preferred orientation, as can be clearly seen in the XRD pattern in Figure 3 .…”

Section: Resultsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

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Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

et al. 2021

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“…ALD has been widely used to fabricate ZrO 2 films for use as capacitor dielectrics [3,13]. ALD has been used to fabricate highly conformal coatings of various metal oxide films, such as SiO 2 , Y 2 O 3 , and HfO 2 , with thicknesses of the order of several to a hundred nanometers on complex three-dimensional capacitor structures with a high aspect ratio [14,15,16].…”

Section: Introductionmentioning

confidence: 99%

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Chung

Kim

et al. 2018

Materials

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The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

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Study of the Effect of Promoters on Thermochemical Transformations of Zirconium Hydroxide

et al. 2018

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Oxidant effect of La(NO3)3·6H2O solution on the crystalline characteristics of nanocrystalline ZrO2 films grown by atomic layer deposition

Cited by 9 publications

References 42 publications

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Study of the Effect of Promoters on Thermochemical Transformations of Zirconium Hydroxide

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