Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Abstract

The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure

“…In order to prove this hypothesis, we conducted control experiment by making a ZrO 2 layer on LaAlO 3 through oxidation of sputter-deposited Zr metal thin films. Magnetic measurement revealed clear MH loops from 10 to 400 K, suggesting that the T c of ZrO 2 is at least higher than 400 K (see details in Figure S5 and Supplementary Note 2), which is consistent with previous reports of ZrO 2 showing high-temperature ferromagnetism up to 700 K. − In addition, the differences in magnetic results of the heterostructure with those of the YIG indeed suggest additional ferromagnetic contribution (see Figure S6). Moreover, the YIG-induced AHE in TMDs and topological materials are usually with an observation temperature much lower than T c of YIG, , and the R AHE is small.…”

“…The ZrO 2 layer is a high- k insulator, and it does not contribute to any electrical signals. During the past decade, both experimental and theoretical studies have shown that intrinsic defects in the oxide nanomaterials can lead to room-temperature ferromagnetism. − A recent paper reported that oxygen vacancy defect-rich ZrO 2 nanostructures show high T c (700 K) and high magnetization (5.9 emu/g) . It should be noted that the deposition process of ZrTe 2 takes place in a high vacuum environment, and therefore, the ZrO 2 layer formed under such a process should be rich in oxygen vacancies, which are possibly responsible for the magnetic moments.…”

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

“…Therefore, HfO 2 has been studied to replace conventional SiO 2 as a high-κ material because of its advantages, such as high density, good ductility and corrosion resistance, as well as its high-k [3,4]. HfO 2 has mainly been deposited by thermal atomic layer deposition (thermal ALD) because this method produces thin films that are pinhole-free, high density and have low contaminants levels (Carbon, Nitrogen); this process also allows excellent thickness control [5][6][7][8].…”

Characteristics of High‐Crystallinity ZrO2Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

“…The growth rate decreased due to precursor desorption by too high a temperature of 400 °C, which prevented the formation of ZrO 2 . [ 20,21 ] This means the crystallinity may be low. Crystallographic data are a key factor in determining plasma power's effect on ZrO 2 thin films’ dielectric constant because the films have identical peaks and only differ in peak intensity.…”