Overlayer induced air gap acting as a responsivity amplifier for majority carrier graphene–insulator–silicon photodetectors

Park, Hong-Ki; Choi, Jaewu

doi:10.1039/c8tc02178c

Cited by 13 publications

(36 citation statements)

References 35 publications

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“…The thickness of the tunneling layer is 4.91 nm, 13.36 nm and 21.12 nm, respectively. According to J ∝ exp(ξ 1/2 d) (ξ is the tunneling barrier height of the insulator layer in eV and d is the insulator thickness) [32], the tunneling current ought to decrease with increasing thickness of Al 2 O 3 , which is consistent with the experimental results. As a result, the variation trend of R and I ph is just the same as the tendency reflected in the Al 2 O 3 thicknesses.…”

Section: Resultssupporting

confidence: 86%

Design and optimization of tunneling photodetectors based on graphene/Al₂O₃/silicon heterostructures

Liu

et al. 2020

Nanophotonics

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Recent discoveries in the field of graphene-based heterostructures have led to the demonstration of high-performance photodetectors. However, the studies to date have been largely limited to the heterojunction with a Schottky barrier, restricted by an inevitable compromise between photoresponsivity and photodetectivity. Here, a new class of graphene-based tunneling photodetectors is introduced by inserting the Al 2 O 3 tunneling layer between silicon and graphene. The photocarriers can tunnel through the designed insulator layer which simultaneously blocks the dark current, thus maintaining high photodetectivity with desirable photoresponsivity. We further modulate the thickness of the Al 2 O 3 layer to explore the tunneling mechanism for the photocarriers, in which a photoresponsivity of 0.75 A/W, a high current ratio of 4.8 × 10 3 and a photodetectivity of 3.1 × 10 12 Jones are obtained at a 13.3-nmthick Al 2 O 3 layer. In addition, the fabrication process is compatible with conventional semiconductor processing, providing further flexibility to large-scale integrated photodetectors with high performance.

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Section: Resultssupporting

confidence: 86%

Design and optimization of tunneling photodetectors based on graphene/Al₂O₃/silicon heterostructures

Liu

et al. 2020

Nanophotonics

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“…This configuration, with the metal-Si interface, allows photoexcited carriers from the metal to be emitted to Si over a potential Φ B , namely SB. The advantage of this structure is facile fabrication and integration with complementary metal-oxide-semiconductor (CMOS) technology, broadband operation, and material structure without complexity [64,76]. Accordingly, graphene-semiconductor heterostructures, as well as quantum dot integration [65] and plasmonic nanoantenna integration [82], have been proposed to realize high-responsivity photodetectors for the telecommunication applications.…”

Section: Photoconductors and Photodiodesmentioning

confidence: 99%

“…This is mainly due to the fact that a thin oxide layer can lower the leakage current in the dark state and photoinduced SBH while the silicon substrate acts as a light absorber and a light-induced carrier re-distributer. Their as-fabricated GIS diode demonstrated a high responsivity reaching 95 A W −1 and a detectivity of 2.1 × 10 12 cm Hz 1/2 W −1 at an optical power density of 35 μW cm -2 [64].…”

Section: Photoconductors and Photodiodesmentioning

confidence: 99%

Recent advances on hybrid integration of 2D materials on integrated optics platforms

Ren

Mitchell

2020

Nanophotonics

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AbstractThe burgeoning research into two-dimensional (2D) materials opens a door to novel photonic and optoelectronic devices utilizing their fascinating electronic and photonic properties in thin-layered architectures. The hybrid integration of 2D materials onto integrated optics platforms thus becomes a potential solution to tackle the bottlenecks of traditional optoelectronic devices. In this paper, we present the recent advances of hybrid integration of a wide range of 2D materials on integrated optics platforms for developing high-performance photodetectors, modulators, lasers, and nonlinear optics. Such hybrid integration enables fully functional on-chip devices to be readily accessible researchers and technology developers, becoming a potential candidate for next-generation photonics and optoelectronics industries.

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“…One of the majority carrier‐type Schottky PDs demonstrated high responsivity (95 A W −1 ), short response period (≈40 µs), and high detectivity (2.1 × 10 12 cm Hz 1/2 W −1 ) even without any significant optimization process compared to conventional minority carrier‐type PDs. [ 14 ] Thus, the high performance of the majority carrier‐type Schottky PDs has not yet been completely appreciated.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Filterless Bilateral Majority Carrier‐Type Color Photodetectors

Cho

Kim

Choi

2022

Advanced Optical Materials

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Photodetectors (PDs) are essential for promoting the modern technology‐reliant lifestyles. Accordingly, the demand for efficient PDs with built‐in signal amplification capabilities is constantly increasing. Generally, built‐in signal amplification is achieved using an avalanching process that operates at a high bias voltage with inevitable excess noise. In this study, back‐to‐back Schottky diodes (BTB SDs) are designed to demonstrate a significant amplification of signals at low bias voltages with relatively low excess noise. Furthermore, the detection efficiency is bilateral and relies less on the illuminated junction or the bias polarity, but is influenced by the wavelength of the illuminating light owing to the specific device structures employed. This enables the identification of the color of the incident light without using any color filters. The BTB graphene–insulator–silicon‐on‐insulator (BTB G–I–SOI) PDs fabricated with controlled interfacial oxides exhibit photoresponsivity up to 2.01 × 104 A W−1, specific detectivity of 1.57 × 1014 cm Hz1/2 W−1 at 5 V, and a rapid response (≈0.3 ms) for a two‐millimeter‐long channel. Thus, BTB G–I–SOI PDs are highly efficient filterless color sensors that establish a novel route for diverse applications of PDs.

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Overlayer induced air gap acting as a responsivity amplifier for majority carrier graphene–insulator–silicon photodetectors

Cited by 13 publications

References 35 publications

Design and optimization of tunneling photodetectors based on graphene/Al₂O₃/silicon heterostructures

Design and optimization of tunneling photodetectors based on graphene/Al₂O₃/silicon heterostructures

Recent advances on hybrid integration of 2D materials on integrated optics platforms

Highly Efficient Filterless Bilateral Majority Carrier‐Type Color Photodetectors

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Overlayer induced air gap acting as a responsivity amplifier for majority carrier graphene–insulator–silicon photodetectors

Cited by 13 publications

References 35 publications

Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures

Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures

Recent advances on hybrid integration of 2D materials on integrated optics platforms

Highly Efficient Filterless Bilateral Majority Carrier‐Type Color Photodetectors

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Design and optimization of tunneling photodetectors based on graphene/Al₂O₃/silicon heterostructures

Design and optimization of tunneling photodetectors based on graphene/Al₂O₃/silicon heterostructures