2006
DOI: 10.1364/oe.14.006001
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Overlay measurement using angular scatterometer for the capability of integrated metrology

Abstract: Angular scatterometry, which has the advantage of good measurement precision, is an optical measurement technology based on the analysis of light scattered from periodic features, such as a linear grating, and is proposed as an alternative solution for overlay metrology. We present overlay measurements using an angular scatterometer and a bright-field microscope. A theoretical library based on rigorous coupled wave theory was created, and the reflected signatures measured by angular scatterometer were matched … Show more

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Cited by 17 publications
(7 citation statements)
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“…The Mueller matrices of the Si grating were calculated by the rigorous coupled-wave analysis (RCWA) [24][25][26] for each p (p ∈ Ω) and a in the spectral range of 200-800 nm with an increment of 10 nm. In the calculation of the covariance matrix C by equation (3), the variances of the Mueller matrix elements were obtained from a noise model given in our previous work [27], which were functions of the specific p and a. According to equation (8 Here, the parameter domain Ω was determined according to the structural parameter values measured by SEM.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The Mueller matrices of the Si grating were calculated by the rigorous coupled-wave analysis (RCWA) [24][25][26] for each p (p ∈ Ω) and a in the spectral range of 200-800 nm with an increment of 10 nm. In the calculation of the covariance matrix C by equation (3), the variances of the Mueller matrix elements were obtained from a noise model given in our previous work [27], which were functions of the specific p and a. According to equation (8 Here, the parameter domain Ω was determined according to the structural parameter values measured by SEM.…”
Section: Resultsmentioning
confidence: 99%
“…Optical scatterometry, also referred to as optical critical dimension metrology, has become one of the most important techniques for critical dimension (CD) and overlay metrology in semiconductor industry due to its inherent speed, noncontact, nondestructive, and inexpensive merits over other techniques, such as scanning electron microscopy (SEM) and atomic force microscopy [1][2][3][4][5][6][7][8][9]. As a model-based metrology technique, the implementation of optical scatterometry involves two steps [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, optical scatterometry is not restricted by the Abbe diffraction limit that is encountered in image-based metrology techniques. Due to its high-throughput, non-destructive, and ease of in-line integration merits, optical scatterometry is widely used in the measurement of CDs and overlays in semiconductor manufacturing [226][227][228][229][230][231].…”
Section: Optical Scatterometrymentioning
confidence: 99%
“…Among the different techniques, optical scatterometry, sometimes referred to as optical critical dimension (OCD) metrology, has recently achieved great success in the monitoring of CD and overlay [1][2][3][4][5][6]. There are two main procedures in optical scatterometry.…”
Section: Introductionmentioning
confidence: 99%