Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

“…RRAMs have the advantages of fast switching, high endurance/scalability, low power consumption, and process compatibility with a complementary metal–oxide–semiconductor (CMOS) technology. The CMOS-compatible TMOs, such as HfO 2– x − and Ta 2 O 5– x , − were already proved to possess reliable resistive switching (RS) performances. However, the RS performances of the TMO-based RRAM do not solely depend on the TMO layer but also on the material type and configuration of the electrodes.…”

“…This is because the electrodes work as the source/reservoir of defects, most typically oxygen vacancy (V O ), as well as the tuning knob of the electric field distribution across the switching oxide layer. In this regard, Pt has been extensively used in many kinds of research, especially from academia. , The adoption of chemically inert Pt makes it possible to avoid the complication of the mechanism analysis, which could originate from the chemical interaction between the normal metal, such as Ti and Al, and the TMO layer. ,,− However, Pt is not compatible with the CMOS fabrication process due to the absence of its dry etching capability.…”

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

“…However, those resistive switching layers in such reports are relatively thicker (443 nm), and device sizes were larger (44100 nm diameter) compared to those used in this work. 59,60 1T-1R integration of the Ta 2 O 5 -based memristor and performance…”