Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping

McCandless, Brian E.; Buchanan, W.A.; Thompson, Christopher P.; Sriramagiri, Gowri; Lovelett, Robert J.; Duenow, Joel N.; Albin, David S.; Jensen, Søren A.; Colegrove, Eric; Moseley, John; Moutinho, H. R.; Harvey, Stephen; Al‐Jassim, Mowafak; Metzger, Wyatt K.

doi:10.1038/s41598-018-32746-y

Cited by 91 publications

(27 citation statements)

References 37 publications

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“…Hence, levels of an impurity, defects, and carrier concentrations affect the mobility of carriers in a semiconductor. Mobility decreases for batch D and E, and for C samples, the highest carrier concentration is achieved indicating effective treatment to be around 390-405 • C. CdTe has the drawback that it is difficult to achieve high doping concentration due to self-compensation from intrinsic defects form, e.g., vacancies (V Cd , V Te ), interstitial defects (Cd i , Te i ), and grain boundaries [58]. Therefore, CdTe carrier concentration is found low, which is one of the key challenges to improve CdTe solar cells' energy yield performance.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation

2021

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In this study, close-spaced sublimation (CSS) grown cadmium telluride (CdTe) thin films with good adhesion to 100 µm thin Schott D263T ultra-thin glass (UTG) were investigated. Cadmium chloride (CdCl2) treatment in vacuum ambient was executed to enhance the film quality and optoelectrical properties of CdTe thin film. The post-deposition annealing temperature ranging from 360–420 °C was examined to improve the CdTe film quality on UTG substrate. Various characterization techniques have been used to observe the compositional, morphological, optical, as well as electrical properties. Scanning electron microscopy (SEM) verified that the CdTe morphology and grain size could be controlled via CdCl2 treatment temperature. Energy Dispersive X-Ray Analysis (EDX) results confirmed that the annealing temperature range of 375–390 °C yielded the stoichiometric CdTe films. UV-Vis analysis estimated the post-treatment bandgap energy in the range of 1.39–1.46 eV. Carrier concentration and resistivity were obtained in the order of 1013 cm−3 and 104 Ω-cm, respectively. All the experimental results established that the CdCl2 treatment temperature range of 390–405 °C might be considered as the optimum process temperature for the deposition of CdTe solar cell on UTG substrate in close-spaced sublimation (CSS) method.

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Section: Electrical Propertiesmentioning

confidence: 99%

Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation

2021

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“…Это понижает степень компенсации акцепторов в слоях и увеличивает концентрацию дырок. Более сложное изменение электрофизических параметров при отжиге образцов CdTe : As, полученных при ДИПТ/ДМК = 0.5, вероятно, объясняется наличием в слоях существенной концентрации межузельного кадмия Cd, который самостоятельно образует глубокий донорный уровень с энергией ионизации 330 мэВ [20] и может взаимодействовать при более высоких температурах отжига с дефектами, связанными с мышьяком.…”

Section: результаты и их обсуждениеunclassified

Акцепторное легирование мышьяком при осаждении слоев CdTe из диметилкадмия и диизопропилтеллура

Evstigneev¹,

Чилясов²,

Моисеев³

et al. 2021

Физика И Техника Полупроводников

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The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metalorganic chemical vapor deposition with dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. Arsenic incorporation into CdTe to depend on the crystallographic orientation of the layers and increases in the order (111)B<(100)<(310). Arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate to the power of 1.4 and an increase with decrease of the diisopropyltellurium/dimethylcadmium ratio from 1.4 to 0.5. The as-grown CdTe:As layers had p-type conductivity with arsenic and hole concentrations of 1·1017–7·1018 and 2.7·1014–4.6·1015 cm–3, respectively, but the arsenic activation efficiency not exceeding 0.3%. After annealing in argon flow (250–450 ° C) the highest hole concentration and arsenic activation efficiency were 1·1017 cm–3 and ~4.5 % respectively. The ionization energy of arsenic determined from the temperature dependence of the hole concentration was in the range of 98–124 meV. Low-temperature photoluminescence spectra of the layers showed an emission peak with energy of 1.51 eV, which can be attributed to donor-acceptor recombination, where the acceptor is AsTe with ionization energy about 90 meV.

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“…Group V element (e.g., As and P) doping, as an alternative to Cu doping for the desired long-time stability, has recently attracted intensive investigations. [7][8][9] However, limited by the high capital costs of the equipment used for the in-situ doping and low effective doping level for the ex situ doping (due to aggregations at grain boundaries), group V doping has not been widely used by the researchers [7,10].…”

Section: Introductionmentioning

confidence: 99%

CuSCN as the Back Contact for Efficient ZMO/CdTe Solar Cells

Song

Bista

et al. 2020

Materials

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The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasitic light absorption by the buffer layer. However, due to the atmosphere sensitivity of ZMO film, the post treatments of ZMO/CdTe stacks, including CdCl2 treatment, back contact deposition, etc., which are critical for high-performance CdTe solar cells became crucial challenges. To realize the full potential of the ZMO buffer layer, plenty of investigations need to be accomplished. Here, copper thiocyanate (CuSCN) is demonstrated to be a suitable back-contact material with multi-advantages for ZMO/CdTe solar cells. Particularly, ammonium hydroxide as the solvent for CuSCN deposition shows no detrimental impact on the ZMO layer during the post heat treatment. The post annealing temperature as well as the thickness of CuSCN films are investigated. Finally, a champion power conversion efficiency of 16.7% is achieved with an open-circuit voltage of 0.857 V, a short-circuit current density of 26.2 mA/cm2, and a fill factor of 74.0%.

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Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping

Cited by 91 publications

References 37 publications

Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation

Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation

Акцепторное легирование мышьяком при осаждении слоев CdTe из диметилкадмия и диизопропилтеллура

CuSCN as the Back Contact for Efficient ZMO/CdTe Solar Cells

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