Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing

Abstract

Characterization of heavily carbondoped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Rational Design of Monocrystalline (InP)yGe5–2y/Ge/Si(100) Semiconductors: Synthesis and Optical Properties

“…The diffraction plots in this case were found to be virtually identical for both (224) and (2̅24) maps each showing two peaks with matching reciprocal point values yielding in-plane lattice constants within the error of the measurement (Δ a / a ∼ 0.02%). Finally, we note that similar observations of tetragonal over-relaxation of misfit strain has been previously found in heavily carbon doped GaAs films and are attributed to the formation of unusual defect structures …”

“…Finally, we note that similar observations of tetragonal over-relaxation of misfit strain has been previously found in heavily carbon doped GaAs films and are attributed to the formation of unusual defect structures. 15 For samples grown at lower temperatures in which the InP concentration is increased from ∼20 to 30% (InPGe 9 to InPGe 4.5 ), the diffraction data show sharper and more intense asymmetrical (004) peaks due to improved crystallinity (see Figure 3 for typical diffraction patterns). In all cases, the (224) RSM analogues exhibit a corresponding sharp and highly intense diffraction map that is elongated in the vertical direction and exactly aligned with the Ge buffer peak along the pseudomorphic line, indicating perfect in-plane lattice-matching between the two materials.…”