2013
DOI: 10.1021/ja405726b
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Rational Design of Monocrystalline (InP)yGe5–2y/Ge/Si(100) Semiconductors: Synthesis and Optical Properties

Abstract: In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to fo… Show more

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“…Equilibrium structures of P­(GeH 3 ) 3 and P­(SiH 3 ) 3 indicating close agreement between calculated and experimental (in parentheses) bonding parameters Reprinted from ref . Copyright 2013.…”
Section: Introductionmentioning
confidence: 77%
“…Equilibrium structures of P­(GeH 3 ) 3 and P­(SiH 3 ) 3 indicating close agreement between calculated and experimental (in parentheses) bonding parameters Reprinted from ref . Copyright 2013.…”
Section: Introductionmentioning
confidence: 77%