Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

Ida, M.; Kurishima, K.; Watanabe, Noriyuki

doi:10.1109/led.2002.806300

Cited by 69 publications

(33 citation statements)

References 6 publications

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“…7). Graded composition near the heterointerface can also diminish interface notch and greatly enhance the emitter injection efficiency [20,21]. Table 1 shows the structure parameters of the HPT which has been optimized.…”

Section: Resultsmentioning

confidence: 99%

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Chen

Zhu

2016

Appl. Phys. A

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Fabrication, physical simulation, and optimization of two-terminal Pnp heterojunction phototransistors (2T-HPTs) based on In 0.53 Ga 0.47 As/InP are reported. The parameters of fundamental models are determined by comparing the simulated current and response characteristics with the experimental results. To optimize the optical gain and device performance, the precise adjustment of the base doping level, base width, and compositional grading of base has been investigated. Properly reducing the base width or increasing the range of the compositional grading can greatly enhance the emitter injection efficiency. The effects of high-low doping in collector region and the insertion of a thin, undoped InGaAs layer in the base region of the HPT have also been investigated in detail. It is found the high-low doping in collector can form an electric field to aid carrier transport, and the intrinsic layer between emitter and base has functions of reducing knee voltage and the dark current of HPT.

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Section: Resultsmentioning

confidence: 99%

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Chen

Zhu

2016

Appl. Phys. A

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“…The carbon and hydrogen concentrations in the base layer were measured using secondary ion mass spectrometry (SIMS). HBT devices with 0.8 Â 3.0 mm 2 -emitter mesa were fabricated using the technique reported previously [16] except for the omission of the base dehydrogenation annealing. Fig.…”

Section: Methodsmentioning

confidence: 99%

C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE

Oda

Watanabe

Uchida

et al. 2004

Journal of Crystal Growth

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“…To eliminate the retarding electric field, a δ-doping layer is adopted and the sheet doping concentration of the δ-doping layer, N δ T δ , needs to satisfy the relationship as follows [5] :…”

Section: Theorymentioning

confidence: 99%

“…The behavior is consistent with the experimental results in refs. [2,5]. There are two important ways to increase J Kirk .…”

Section: Theorymentioning

confidence: 99%

On the design of base-collector junction of InGaAs/InP DHBT

Jin

Liu

2008

Sci. China Ser. E-Technol. Sci.

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The effects of the composite-collector structure and the δ-doping density in InGaAs/InP DHBT on the Kirk current have been studied. The effective grade layer in the discretely graded layer goes into the InGaAs setback layer. The formulas of the maximum doping density, the maximum Kirk current, and the corresponding δ -doping density are derived under different Kirk-effect conditions. Both the maximum collector doping density and the maximum Kirk current are dependent on the δ -doping layer. By optimizing the delta doping, the Kirk current density can be greatly increased.

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Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

Cited by 69 publications

References 6 publications

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE

On the design of base-collector junction of InGaAs/InP DHBT

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