Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

Useinov, Artur; Mryasov, O. N.; Kosel, Jürgen

doi:10.1016/j.jmmm.2012.04.025

Cited by 13 publications

(12 citation statements)

References 16 publications

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“…1(b) and Fig. 1(c 10 The first term has a simple form (1) and represents simple approach which can be used also for description of the direct electron tunneling in MTJs [5][6][7][8][9] In case of symmetric nonmagnetic a -spot contact 2) were simplified in the limit of the nonmagnetic symmetric a-spot contact: …”

Section: A-spot Model Of the Magnetic Pointcontactmentioning

confidence: 99%

Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

Useinov

Lai

2016

SPIN

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Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs). The electron tunnel transport through NP was simulated in range of double barrier approach, which was integrated into the model of the magnetic point-like contact. The resonant TMR conditions and temperature impact were explored in detail. Moreover, the possible reasons of the temperature induced resonant conditions were discussed in the range of the lead-tunneling cell (TC)-lead model near Kondo temperature. We also found that redistribution of the voltage drop becomes crucial in this model. Furthermore, the direct tunneling plays the dominant role and cannot be omitted in the quantum systems with the total tunneling thickness up to 5-6 nm. Hence, Coulomb blockade model cannot explain Kondoinduced TMR anomalies in nanometer-sized tunnel junctions.

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Section: A-spot Model Of the Magnetic Pointcontactmentioning

confidence: 99%

Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

Useinov

Lai

2016

SPIN

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“…The electron transport model through the NP is similar to that for the double barrier magnetic tunnel junction (DMTJ). This model has a long history of applications 16 28 29 30 31 32 and development 33 34 35 36 . This theoretical works described the electron transport through a nanojunction between two different ferromagnetic leads taking into account the spin-dependent momentum conservation law.…”

Section: Model Of Coherent Tunnelingmentioning

confidence: 99%

“…This theory utilizes quasi-classical and quantum mechanical approaches and is based on the solution of an extended kinetic equations for Green functions. Therefore it can be applied for the electron transport calculations through the tunnel barrier within a quantum-ballistic limit for single and double barrier MTJs 16 30 31 .…”

Section: Model Of Coherent Tunnelingmentioning

confidence: 99%

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Useinov

et al. 2015

Sci Rep

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The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

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“…We report an electric‐bias‐induced two‐ to threefold increase of the TMR in hybrid MTJs (H‐MTJs) of V/MgO/Fe/MgO/Fe/Co (NS/I/F1/I/F2 with NS being a normal metal with surface states) in a wide temperature range, from liquid helium to room temperatures. The output voltage parameter, which is crucial for possible applications, [ 21–24 ] strongly exceeds the values observed for single barrier F1/I/F2 MTJs at biases above 0.5 V. Moreover, to our best knowledge, the room temperature value exceeding 0.8 V are a record high for all known spintronic devices. We explain this unprecedented behavior with a simplified model, considering magnetic‐state‐dependent sequential tunneling though two nonlinear devices in series.…”

Section: Introductionmentioning

confidence: 99%

Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias

González-Ruano

Tiuşan

Hehn

et al. 2021

Adv Elect Materials

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Spin‐resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in spin electronics. However, the electron symmetry filtering breaks down under applied bias, dramatically reducing the TMR above 0.5 V. This strongly hampers the application range of MTJs. To circumvent the problem, resonant tunneling through quantum well states in thin layers has been used so far. This mechanism, however, is mainly effective at low temperatures. Here, a fundamentally different approach is demonstrated, providing a strong TMR boost under applied bias in V/MgO/Fe/MgO/Fe/Co hybrids. This pathway uses spin orbit coupling (SOC) controlled interfacial states in vanadium, which contrary to the V(001) bulk states are allowed to tunnel to Fe(001) at low biases. The experimentally observed strong increase of TMR with bias is modeled using two nonlinear resistances in series, with the low bias conductance of the first (V/MgO/Fe) element being boosted by the SOC‐controlled interfacial states, while the conductance of the second (Fe/MgO/Fe) junctions are controlled by the relative alignment of the ferromagnetic layers. These results pave a way to unexplored and fundamentally different spintronic device schemes, with tunneling magnetoresistance uplifted under applied electric bias.

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Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

Cited by 13 publications

References 16 publications

Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias

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