Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure

Research progress in the postprocessing and application of GaN crystal

“…4f), the output power of the GaN-based LED with an "inverted pyramid side wall" shape was increased by 27%. 48 The above studies prove that wet etching can improve the light output efficiency of LED devices and is an indispensable step in the process of LED fabrication.…”