Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Ducatteau, D.; Minko, A.; Hoel, Virginie; Morvan, E.; Delos, E.; Grimbert, B.; Lahreche, H.; Bove, P.; Gaquière, C.; Jaeger, J.C. de; Delage, S.

doi:10.1109/led.2005.860385

Cited by 106 publications

(52 citation statements)

References 10 publications

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“…However, the achieved maximum drain-source current and transconductance are significantly higher. These dc performances are comparable to the highest reported performances by few other groups [8][9][10]. We have also noted a much higher yield of working devices and excellent uniformity in terms of devices performances over the 2 in wafer.…”

Section: Resultssupporting

confidence: 87%

Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

Haffouz

Sèmond

Bardwell

et al. 2009

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 87%

Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

Haffouz

Sèmond

Bardwell

et al. 2009

Journal of Crystal Growth

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“…[1][2][3][4] Epitaxial AlGaN/GaN heterostructure forms two-dimensional electron gas (2DEG) at the interface due to the unique polarization properties of III-Nitride materials. 5,6 The spontaneous polarization and piezoelectric polarizations play an important role in the formation of 2DEG at the AlGaN/GaN interfaces.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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“…The enhancement of power characteristics can be achieved by improving the current level or breakdown voltage of the HEMTs. A variety of methods have been used to increase the power performance of HEMTs these include the GaN/AlGaN material system [5,6], the gate-fieldplate technique [7,8], and the adoption of composite channel systems [9,10]. Most of these methods have focused on the enhancement of transistor power by increasing the breakdown voltage.…”

Section: ⅰ Introductionmentioning

confidence: 99%

Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

Ko¹,

Park²

2013

Journal of electromagnetic engineering and science

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We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of 0.1-μm metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths (wt) of different N were proposed. The cut-off frequency (fT) showed an almost independent relationship with wt; however, the maximum frequency of oscillation (fmax) exhibited a strong functional relationship of gate-resistance (Rg) influenced by both N and wt. A greater wt produced a higher fmax; but, to maximize fmax at a given wt, to increase N was more efficient than to increase the single gate_width.

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Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Cited by 106 publications

References 10 publications

Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

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