Out to Murray Hill to play: an early history of transistors

Early, J.M.

doi:10.1109/16.960369

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…5. In Jim Early's words [7], another luminary of the transistor era, "The small dark rectangle on the formed metal support at lower left center is poly crystalline germanium.…”

Section: Invention Of the Bipolar Transistormentioning

confidence: 98%

From millibits to terabits per second and beyond - Over 60 years of innovation

Jindal

2009

2009 2nd International Workshop on Electron Devices and Semiconductor Technology

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Three innovations responsible for an explosive growth in available information bandwidth over the last 30 years are highlighted. These include the invention of the bipolar and MOS transistors, development of information theory and the invention of solid-state lasers. Although demonstrated 13 years later than the bipolar transistors, fundamental contributions that led to rapid adoption of MOS as the technology of choice in meeting the needs of wireless and lightwave communication systems is explained. Continued research in understanding and improving MOSFET noise performance is elucidated. Theoretical basis of ultra-low-noise optical signal detection using finite medium and non-instantaneous multiplication are presented.

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“…5. In Jim Early's words [7], another luminary of the transistor era, "The small dark rectangle on the formed metal support at lower left center is poly crystalline germanium.…”

Section: Invention Of the Bipolar Transistormentioning

confidence: 98%

From millibits to terabits per second and beyond - Over 60 years of innovation

Jindal

2009

2009 2nd International Workshop on Electron Devices and Semiconductor Technology

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“…Bipolar junction transistor (BJT) is current operated semiconductor device and thus has applications in current amplification, whereas vacuum tubes were being used as voltage amplifiers. The first integrated circuit was prepared using two BJTs on a single chip in 1958 [ 47 ], since implementing complicated circuits were easy with BJTs. Later, due to advantages of metal oxide semiconductor field effect transistor (MOSFET) technology including simpler IC processing and packing more devices on the single chip, ICs were produced using MOSFETs since the 1970s [ 32 ].…”

Section: Brief Historymentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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“…68,69 Jim Early concurrently improved our understanding of the static characteristics of conventional bipolar transistors by utilizing a heavily doped, thin base such that the space-charge widening in the collector enhanced the bipolar transistor's transist time. 70,71 The mesa and planar processes paved the way for the fabrication of the IC by Jack Kilby 15,16,18 and Robert Noyce, 17,18 respectively, in 1958. Henry Theurerer and colleagues 72 expanded the applicability of epitaxial structures 1 by implementing Bernard Murphy's localized, high-concentration sub-collector diffusion in the silicon substrate, 73,74 before epitaxial deposition, which enhanced bipolar IC performance.…”

Section: Threshold Eventsmentioning

confidence: 99%

“…68,69 Jim Early concurrently improved our understanding of the static characteristics of conventional bipolar transistors by utilizing a heavily doped, thin base such that the space-charge widening in the collector enhanced the bipolar transistor's transist time. 70,71 The mesa and planar processes paved the way for the fabrication of the IC by Jack Kilby 15,16,18 97 The exploding research on the physical chemistry and resulting electronic properties of single-crystal germanium and silicon ͑i.e., crystal growth, control of composition, defects, structure, diffusion, electrical and thermal transport properties as well as surface and electrode properties͒ were summarized by Bruce Hannay ͑Fig. 9͒, ECS President in 1973-1974 in the classic monograph Semiconductors.…”

mentioning

confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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Out to Murray Hill to play: an early history of transistors

Cited by 8 publications

References 2 publications

From millibits to terabits per second and beyond - Over 60 years of innovation

From millibits to terabits per second and beyond - Over 60 years of innovation

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

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