Out of band radiation effects on resist patterning

George, Simi; Naulleau, Patrick

doi:10.1117/12.881161

Cited by 6 publications

(5 citation statements)

References 8 publications

(8 reference statements)

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“…It has been hypothesized that this could account for performance differences with certain resists between the SEMATECH Berkeley MET and commercial tools. To study this effect, out-of-band illumination capabilities have been added to the BMET [19]. An example of the importance of this effect and its variance among different resist platforms is demonstrated in Fig.…”

Section: Out-of-band Radiation Effectsmentioning

confidence: 99%

Critical challenges for EUV resist materials

et al. 2011

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Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization phase, critical challenges remain in the development of EUV resist materials. The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements. Although several materials have met the resolution requirements, LER and sensitivity remain a challenge. As we move beyond the 22-nm node, however, even resolution remains a significant challenge. Chemically amplified resists have yet to demonstrate the required resolution at any speed or LER for 16-nm half pitch and below. Going to non-chemically amplified resists, however, 16-nm resolution has been achieved with a LER of 2 nm but a sensitivity of only 70 mJ/cm 2 .

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Section: Out-of-band Radiation Effectsmentioning

confidence: 99%

Critical challenges for EUV resist materials

et al. 2011

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“…This is because OOB radiation is assumed to act like flare. So, there have been various attempts to reduce effect of OOB radiation by improvement of laser source 5 , mirror 1 and resist material [6][7][8][9][10][11] . In this paper, OOB reduction via development of resist materials is discussed.…”

Section: Introductionmentioning

confidence: 99%

Effects of out-of-band radiation on EUV resist performance

et al. 2012

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Extreme ultraviolet (EUV) lithography high volume manufacturing tools are expected to use laser produced plasma sources to generate EUV radiation necessary for resist exposure. EUV light from laser sources emit light over a wide spectral range or popularly known as out-of-band (OOB) radiation along with the desired wavelength. EUV resists are sensitive to both EUV and OOB radiation because a fair amount of the EUV photoresists are based on materials designed for 193 nm and 248 nm. Some of the detrimental effects of OOB radiation within the lithography process can be seen in the form of photoresist film thickness loss, which in turn results in profile degradation. Therefore development of EUV resists which are insensitive to OOB radiation is very important. We investigated EUV resist patterning performance and the effect of OOB radiation specifically in the DUV (193 nm and 248 nm) wavelength range. Resist materials with various DUV absorbance were prepared, and less OOB sensitive materials were found. Moreover, in this study effective top-coat type material for OOB reduction was developed and its effectiveness was confirmed by EUV exposure results.

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“…It is concerned to be the cause of deterioration of lithographic performance. [1][2][3][4]9 Moreover, outgassing from resist remains a significant problem for tool optics.…”

Section: Introductionmentioning

confidence: 99%

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

et al. 2013

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EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL.Especially, concerning about deterioration of the patterning performance by Out-of-Band (OoB) light existing in the EUV light, and contamination problem of exposure tool due to the resist outgassing are the key issues which have to be resolved in the material view point toward the high volume manufacturing by EUVL. This paper proposes the solution for these critical issues by applying the top coat material.The key characteristics for top coat material are the protection of the OoB effect, the prevention of the outgassing from resist as a barrier layer and enhancement of photo resist performance, like resist profile and process window. This paper describes the material design and performance. The optical property needs having the high absorbance of DUV light in OoB range and high transmittance for 13.5nm wavelength. Outgassing barrier property needs high broking property against non contamination chemical species from photo resist outgassing. The study of TOF-SIMS analysis indicates how much the polymer chemistry can impact for outgassing barrier property. The dependency of material design and lithography performance is also discussed.

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Out of band radiation effects on resist patterning

Cited by 6 publications

References 8 publications

Critical challenges for EUV resist materials

Critical challenges for EUV resist materials

Effects of out-of-band radiation on EUV resist performance

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

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