Ostwald ripening and flattening of epitaxial ZnO layers during <i>in situ</i> annealing in metalorganic vapor phase epitaxy

Krost, A.; Christen, J.; Oleynik, N.; Dadgar, A.; Deiter, S.; Bläsing, J.; Krtschil, A.; Förster, D.; Bertram, F.; Diez, A.

doi:10.1063/1.1785871

Cited by 42 publications

(30 citation statements)

References 14 publications

(5 reference statements)

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“…The full-width at half-maximum (FWHM) of the ZnO (0 0 2) peak showed a significant decrease from 400 to 450 1C, indicating increased crystallinity at and above growth temperatures of 450 1C. The lower crystal quality and higher RMS surface roughness, discussed later, suggest that layers grown below 450 1C are useful as buffer layers for nucleation of highquality films to be grown at higher temperatures [27]. These trends were also reflected in Raman spectroscopy data, which showed an increase in crystal quality above 450 1C.…”

Section: Article In Pressmentioning

confidence: 91%

Metal-organic chemical vapor deposition of ZnO

Pan

Fenwick

Straßburg

et al. 2006

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 91%

Metal-organic chemical vapor deposition of ZnO

Pan

Fenwick

Straßburg

et al. 2006

Journal of Crystal Growth

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“…The crystal properties of ZnO films strongly depend on the technology of the deposition and the conditions of the growth process as well as of the different post growth treatments [18]. Previously, different annealing schemes such as rapid thermal annealing [19], in-situ thermal an-www.pss-c.com nealing [20], and face-to-face annealing [21], were applied and their influence on structural, optical, morphological, and electrical properties of pure ZnO was revealed [22][23][24]. Also, several studies have focused on the influence of post-deposition annealing on the properties of polycrystalline ZnO, doped by In [25], As [26], Ni [27], Ag [28], Cu [29], Mg [30].…”

mentioning

confidence: 99%

Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films

Khranovskyy

Großner

Lasorenko

et al. 2006

Phys. Status Solidi (c)

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In this study, the influence of thermal annealing in different ambients on the electrical and morphological properties of Ga-doped ZnO films with 1wt.% gallium acetylacetonate in the precursor mix is investigated systematically. As-grown samples were prepared on c-plane Al 2 O 3 by PEMOCVD with a substrate temperature of 300 o C and possess a resistivity of about 10 -2 Ω·cm. The annealing was realized in isochronal steps between 300 to 1000 o C for 1 hour in argon and air ambient, respectively. The resistivity of the films was found to be dependent on the annealing atmosphere. During annealing in air, the resisitivity increases monotically with an abrupt reduction at 800 o C, whereas the annealing in argon does not induce significant changes but results in two clear minima at 300 o C and 800 o C. These effects are explained with crystal improvement at low temperature (300 o C) and successive dopant activation at higher temperature (800 o C). Furthermore, an anomalous surface flattening at 800 o C was observed. The obtained results suggest that the annealing procedure does allow to decrease the resistivity and roughness of as-grown ZnO:Ga films, what would be beneficial for the application of PEMOCVD-grown ZnO thin films for the formation of abrupt junctions in p-n device structures.

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“…After cleaning the GaN on sapphire template, the reactor was heated to 450 1C under hydrogen and a $400 nm thick ZnO buffer was grown using DMZn and tertiarybutanol. After this the reactor was heated to 900 1C under nitrogen in a mixture of tertiarybutanol and N 2 O. ZnO growth was continued after a surface smoothening annealing step [29] with N 2 O and DMZn [20]. For doping with nitrogen ammonia [10], NO [8] and unsymmetrical-dimethyl-hydrazine (UDMHy) with molar flows of up to 0.44 mmol/min, 3.34 mmol/min, and 94 mmol/min were used, respectively.…”

Section: Methodsmentioning

confidence: 99%