OSNR Sensitivity Analysis for Si-Ge Avalanche Photodiodes

Yuan, Yuan; Srinivasan, Sudharsanan; Peng, Yiwei; Liang, Di; Huang, Zhihong; Sorin, Wayne V.; Cheung, Stanley; Fiorentino, Marco; Beausoleil, Raymond G.

doi:10.1109/lpt.2022.3153892

Cited by 11 publications

(7 citation statements)

References 15 publications

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“…The total calculated loss per channel is -14 dBm which becomes the required APD sensitivity. Assuming a reasonable OSNR at 40 dB, a bit-error-rate (BER) of < 1e-9 should be attainable according on our past calculations on in-house designed APDs [52]. Assuming the same OSNR, if the comb laser power/line can be ~ -7 dB as demonstrated in Section II.…”

Section: Tranceiver Architecture Specificationsmentioning

confidence: 97%

Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

Cheung

Yuan

Peng

et al. 2022

J. Lightwave Technol.

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We discuss the design and demonstration of a space and dense wavelength division multiplexed heterogeneous III-V/Si transmitter based on a single multi-wavelength quantum dot laser source and ultra-power-efficient metal-oxide-semiconductor capacitor (MOSCAP) (de-)interleaver. This paper begins by introducing a transceiver architecture capable of > 1 Tb/s transmission with < 1.5 pJ/bit power consumption, followed by a detailed discussion of the heterogeneous laser source and (de-)interleaver. The O-band quantum dot laser, based on a compound cavity design, has a FSR ~ 64 GHz with a 1σ variation of ~ 1.08 GHz and a measured relative intensity noise (RIN) of ~ -144 dB/Hz for the largest comb peak. The single-ring-assisted asymmetric Mach-Zehnder interferometer (1-RAMZI) MOSCAP (de-)interleaver exhibit cross-talk (XT) levels down to -27 dB for tuning powers of 10.0 nW. Finally, to the best of our knowledge, we have demonstrated for the first time, a simultaneous wavelength and space division multiplexed transmitter fabricated on a heterogeneous III-V-on-silicon platform. Experiments show (de-)interleaved 17 optical comb lines, each modulated at 25 Gb/s non-return-to-zero (NRZ) for an aggregate bandwidth of 425 Gb/s.

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Section: Tranceiver Architecture Specificationsmentioning

confidence: 97%

Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

Cheung

Yuan

Peng

et al. 2022

J. Lightwave Technol.

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“…For the NRZ signal, the SNR of all channels is >4.9, which is affected by the circuit noise from the oscilloscope and the limited sample rate of arbitrary waveform generator (AWG). Assuming a Gaussian noise distribution, the bit-error-rate (BER) as a function of input optical power for 92 Gbit/s signal is calculated from the measured Q-factor [13,37]. At a forward error correction (FEC) threshold (3.8×10 -3 ), the sensitivity of this all-Si APD is ~ -2 dBm for 92 Gbit/s NRZ signals.…”

Section: Eye Diagramsmentioning

confidence: 99%

“…High-temperature epitaxial growth of Ge is complex, costly and can be nonuniform across the wafer. It accounts for ~ 40% of the whole chip cost [12][13][14][15] and is not available in many CMOS foundries presently. Technical and economic challenges in the Ge process contribute to limited market adoption of Si photonics.…”

Section: Introductionmentioning

confidence: 99%

1.28 Terabit-per-second all-silicon avalanche receiver

Peng,

Yuan,

Sorin

et al. 2023

Preprint

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To meet the exponential growth in data traffic, silicon (Si) photonics has emerged as a promising technology for ultra-high-speed and low-cost optical interconnects. However, achieving high-performance photodetectors (PDs) on Si photonics requires integrating narrower-bandgap materials, resulting in more complex fabrication processes, higher cost, and yield issues. To address this challenge, we demonstrate an all-Si solution showing a cost-efficient 8-channel double-microring resonator (MRR) avalanche photodiode (APD)-based receiver (RX) with an aggregate data rate of 1.28 Tb/s. All channels show excellent uniformity in their device performance with a responsivity of 0.4 A/W, an ultra-low dark current of 1 nA, a high bandwidth of 40 GHz, and a 𝑘 value of 0.28. To the best of our knowledge, this is the first demonstration of an all-Si RX supporting a record-high transmission data rate of 160 Gb/s per channel, along with ultralow electrical crosstalk of < -50 dB. This all Si optical RX can compete with the commercial heterojunction-based RXs and promises ~ 40% chip cost saving, thus paving the way to realize >3.2 Tb/s interconnects for future optical networks.

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“…Recently, we have leveraged our heterogeneous III-V/Si optical interconnect platform 36,64 to integrate memristors based on semiconductor-insulator-semiconductor capacitors (SISCAP). This platform is suitable for seamless integration of quantum dot (QD) comb lasers [24][25][26][27] , III-V/Si SISCAP ring modulators [28][29][30] , Si-Ge avalanche photodetectors (APDs) [31][32][33][34] , QD APDs 35,36 , in-situ III-V/Si light monitors 37,38 , III-V/Si SISCAP optical filters 39,40 , and non-volatile phase shifters 15,16,16,17,17,[41][42][43][44][45][46] , which are all essential towards realizing a fully integrated optical chip. These memristors are defined by the semiconductor-oxide interface and act as non-volatile phase shifters due to a multitude of effects described previously.…”

Section: Introductionmentioning

confidence: 99%

Energy Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

Cheung,

Tossoun,

Yuan

et al. 2023

Preprint

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We demonstrate non-volatile optical functionality by embedding multi-layer HfO2/Al2O3 memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaver filters. The MZI optical memristor exhibits non-volatile optical phase shifts > π (ΔngIII-V/Si = 2.70 × 10-3) with ~ 30 dB extinction ratio while consuming 0 electrical power consumption in a true “set-and-forget” operation. We demonstrate 6 non-volatile states with each state capable of 4 Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and most likely beyond. To the best of our knowledge, we have demonstrated for the first time, non-volatile III-V/Si optical memristors with the largest electric-field driven phase shifts and reconfigurable filters with the lowest power consumption.

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OSNR Sensitivity Analysis for Si-Ge Avalanche Photodiodes

Cited by 11 publications

References 15 publications

Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

Demonstration of a 17 × 25 Gb/s Heterogeneous III-V/Si DWDM Transmitter based on (De-) Interleaved Quantum Dot Optical Frequency Combs

1.28 Terabit-per-second all-silicon avalanche receiver

Energy Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

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