Oscillations of transport properties in PbTe–Bi2Te3 solid solutions

Рогачева, Е. И.; Водорез, О. С.; Nashchekina, O. N.

doi:10.1016/j.jpcs.2012.07.015

Cited by 4 publications

(1 citation statement)

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“…With such a small average grain size, high density of grain boundaries and dislocations, phonons can be significantly scattered with different wavelengths, leading to reduced κ. As a donor impurity [32][33][34], Bi has been selected as the dopant to induce n-type conductivity and improve the electrical transport properties of as-sintered PbTe. The Bi dopants have been shown to improve σ and depress the bipolar conduction to stabilize S [17,19,30,31], and eventually resulting in a high ZT .…”

Section: Introductionmentioning

confidence: 99%

n-type Bi-doped PbTe Nanocubes with Enhanced Thermoelectric Performance

et al. 2017

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In this study, Bi was selected to dope PbTe nanocubes to develop high performance n-type PbTebased thermoelectric materials via nanostructure engineering using a facile solvothermal method. Bi dopants effectively improve the electrical transport properties of the as-sintered PbTe nanomaterials by tuning the carrier concentrations, achieving promising electrical conductivity and Seebeck coefficient which are comparable to bulk materials. Moreover, a low lattice thermal conductivity has been secured in the sintered Bi-doped PbTe nanomaterials, which is remarkably lower than its bulk counterparts. Extensive experimental and theoretical evidences reveal that such low lattice thermal conductivity is attributed to the enhanced phonon scattering by the high density of grain boundaries and dislocations, in turn, leading to an enhanced peak ZT ~1.35 at 675 K for n-type Pb 0.99 Bi 0.01 Te.

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