Orthorhombic HfO<sub>2</sub> with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation

Palade, Catalin; Slav, A.; Lepadatu, Ana-Maria; Stavarache, Ionel; Dascalescu, I.; Maraloiu, Valentin-Adrian; Negrilǎ, C.; Logofatu, C.; Stoïca, T.; Teodorescu, V. S.; Ciurea, Magdalena Lidia; Lazanu, S.

doi:10.1088/1361-6528/ab352b

Cited by 15 publications

(17 citation statements)

References 39 publications

(53 reference statements)

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“…Additionally, the retention time of Ge nanocrystalline floating-gate memory with five layers reaches 10 4 s [ 9 ]. According to the report by C. Palade et al, the bilayer Ge nanocrystal floating-gate memory has the largest memory window of 6.1 V [ 10 ]. As for the research progress of floating-gate memory based on Si nanocrystalline dots, S.-W Fu et al reported that the memory window of multilayer Si nanocrystal floating-gate memory increases from 16 to 25.6 V after the density of Si nanocrystal increases from 1.6 × 10 12 to 2.6 × 10 12 [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

Shen

et al. 2022

Nanomaterials

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As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the computing in a memory chip, a new candidate with high density and a large on/off current ratio is now urgently needed. Here, we first report that 3D NAND flash memory with a high density of multilevel storage can be realized in a double-layered Si quantum dot floating-gate MOS structure. The largest capacitance–voltage (C-V) memory window of 6.6 V is twice as much as that of the device with single-layer nc-Si quantum dots. Furthermore, the stable memory window of 5.5 V can be kept after the retention time of 105 s. The obvious conductance–voltage (G-V) peaks related to the charging process can be observed, which further confirms that the multilevel storage can be realized in double-layer Si quantum dots. Moreover, the on/off ratio of 3D NAND flash memory with a nc-Si floating gate can reach 104, displaying the characteristic of a depletion working mode of an N-type channel. The memory window of 3 V can be maintained after 105 P/E cycles. The programming and erasing speed can arrive at 100 µs under the bias of +7 V and −7 V. Our introduction of double-layer Si quantum dots in 3D NAND float gating memory supplies a new way to the realization of computing in memory.

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Section: Introductionmentioning

confidence: 99%

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

Shen

et al. 2022

Nanomaterials

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“…HfO 2 is also promising for integrated ferroelectric memory devices due to nanoscale ferroelectricity [17,18]. More than that, NVM performance can be further enhanced by the Coatings 2022, 12, 348 2 of 12 cumulative contribution of the ferroelectric HfO 2 matrix besides that of Ge QDs charge storage centers [19]. By using a channel with Ge:HfO 2 gate, ferroelectric gating of the metal-insulator transition in ultra-thin VO 2 was also successfully demonstrated [20].…”

Section: Introductionmentioning

confidence: 99%

“…More than that, Sn presence decreases the crystallization temperature, making the fabrication of memories with SiGeSn QDs nodes to be more suitable in terms of CMOS compatibility due to the reduced thermal budget compared to Si and Ge NCs/QDs formation. On the other hand, by tuning component layer thicknesses, high versatility in tuning morphology parameters is achieved also through the versatility of magnetron sputtering deposition and rapid thermal annealing (RTA) nanostructuring by the large variation of technological preparation conditions and parameters (sputtering targets, powers and rates, atmosphere; RTA temperature, ramps, gas flows, gases) [14,19].…”

Section: Introductionmentioning

confidence: 99%

SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors

et al. 2022

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Group IV quantum dots (QDs) in HfO2 are attractive for non-volatile memories (NVMs) due to complementary metal-oxide semiconductor (CMOS) compatibility. Besides the role of charge storage centers, SiGeSn QDs have the advantage of a low thermal budget for formation, because Sn presence decreases crystallization temperature, while Si ensures higher thermal stability. In this paper, we prepare MOS capacitors based on 3-layer stacks of gate HfO2/floating gate of SiGeSn QDs in HfO2/tunnel HfO2/p-Si obtained by magnetron sputtering deposition followed by rapid thermal annealing (RTA) for nanocrystallization. Crystalline structure, morphology, and composition studies by cross-section transmission electron microscopy and X-ray diffraction correlated with Raman spectroscopy and C–V measurements are carried out for understanding RTA temperature effects on charge storage behavior. 3-layer morphology and Sn content trends with RTA temperature are explained by the strongly temperature-dependent Sn segregation and diffusion processes. We show that the memory properties measured on Al/3-layer stack/p-Si/Al capacitors are controlled by SiGeSn-related trapping states (deep electronic levels) and low-ordering clusters for RTA at 325–450 °C, and by crystalline SiGeSn QDs for 520 and 530 °C RTA. Specific to the structures annealed at 520 and 530 °C is the formation of two kinds of crystalline SiGeSn QDs, i.e., QDs with low Sn content (2 at.%) that are positioned inside the floating gate, and QDs with high Sn content (up to 12.5 at.%) located at the interface of floating gate with adjacent HfO2 layers. The presence of Sn in the SiGe intermediate layer decreases the SiGe crystallization temperature and induces the easier crystallization of the diamond structure in comparison with 3-layer stacks with Ge-HfO2 intermediate layer. High frequency-independent memory windows of 3–4 V and stored electron densities of 1–2 × 1013 electrons/cm2 are achieved.

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“…The broad possibilities of using nanomaterials in nuclear medicine and radiation therapy have been shown in recent decade. They can be utilized in a wide variety of applications, from ionizing radiation generation [ 1 ] and dosimetry [ 2 ] to the targeted delivery of radionuclides [ 3 ] and tumor imaging [ 4 ]. The use of nanomaterials for modifying the biological effect of ionizing radiation is also a hopeful approach to increase the efficacy of cancer treatment.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Spectral Composition of Kilovoltage X-rays on High-Z Nanoparticle-Assisted Dose Enhancement

Колыванова

Белоусов

Krusanov

et al. 2021

IJMS

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Nanoparticles (NPs) with a high atomic number (Z) are promising radiosensitizers for cancer therapy. However, the dependence of their efficacy on irradiation conditions is still unclear. In the present work, 11 different metal and metal oxide NPs (from Cu (ZCu = 29) to Bi2O3 (ZBi = 83)) were studied in terms of their ability to enhance the absorbed dose in combination with 237 X-ray spectra generated at a 30–300 kVp voltage using various filtration systems and anode materials. Among the studied high-Z NP materials, gold was the absolute leader by a dose enhancement factor (DEF; up to 2.51), while HfO2 and Ta2O5 were the most versatile because of the largest high-DEF region in coordinates U (voltage) and Eeff (effective energy). Several impacts of the X-ray spectral composition have been noted, as follows: (1) there are radiation sources that correspond to extremely low DEFs for all of the studied NPs, (2) NPs with a lower Z in some cases can equal or overcome by the DEF value the high-Z NPs, and (3) the change in the X-ray spectrum caused by a beam passing through the matter can significantly affect the DEF. All of these findings indicate the important role of carefully planning radiation exposure in the presence of high-Z NPs.

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Orthorhombic HfO₂ with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation

Cited by 15 publications

References 39 publications

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors

Impact of the Spectral Composition of Kilovoltage X-rays on High-Z Nanoparticle-Assisted Dose Enhancement

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Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation

Cited by 15 publications

References 39 publications

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors

Impact of the Spectral Composition of Kilovoltage X-rays on High-Z Nanoparticle-Assisted Dose Enhancement

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Orthorhombic HfO₂ with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation