Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films

Пархоменко, И. Н.; Власукова, Л. А.; Komarov, F. F.; Milchanin, O.; Makhavikou, M.; Mudryi, A. V.; Zhivulko, V. D.; Żuk, J.; Kopyciński, P.; Murzalinov, Danatbek

doi:10.1016/j.tsf.2017.02.027

Cited by 24 publications

(11 citation statements)

References 35 publications

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“…These bonds have dissociation energies of 3.34 eV and 4.05 eV, respectively [48], which are both lower than the photon energy of 5.08 eV corresponding to a wavelength of 244 nm. The dissociation of this bonds may allow the formation of new Si-N bonds with a bond energy of 3.45 eV and the release of hydrogen [49,50]. This effect has been previously observed when SiN films are subjected to thermal annealing and it is often associated with a slight increase of the bandgap of nitrogen-rich films mainly due to the structural rearrangement of the bonding configuration of the Si-N bonds, which results in a smaller refractive index and in the densification of the SiN films [51].…”

Section: Published Bymentioning

confidence: 99%

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

et al. 2020

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We demonstrate the possibility of post-fabrication trimming of the response of nitrogen-rich silicon nitride racetrack resonators by using an ultraviolet laser. The results revealed the possibility to efficiently tune the operating wavelength of fabricated racetrack resonators to any point within the full free spectral range. This process is much faster than similar, previously presented methods (in the order of seconds, compared to hours). This technique can also be applied to accurately trim the optical performance of any other silicon photonic device based on nitrogen-rich silicon nitride.

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Section: Published Bymentioning

confidence: 99%

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

et al. 2020

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“…Известно, что незначительное увеличение концентрации избыточного кремния в нитриде может привести к увеличению проводимости диэлектрика на несколько порядков [5]. Варьирование соотношения Si/N в слое SiN x позволяет управлять не только сопротивлением диэлектрического слоя, но и его светоизлучающими свойствами [8]. Недавно эффект РП был обнаружен и изучен в светоизлучающих структурах на основе нитрида кремния Cr/Si/SiN x /Si/ITO (ITO -Indium Tin Oxide, оксид индия-олова) [9].…”

Section: Introductionunclassified

Резистивное переключение в структурах ITO/SiN-=SUB=-x-=/SUB=-/Si

Komarov¹,

Romanov²,

Власукова³

et al. 2021

Журнал Технической Физики

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Исследованы электрофизические свойства и эффект резистивного переключения мемристорной структуры ITO/SiNx/Si. Пленка нитрида кремния толщиной ~200 nm с изменяющимся по глубине соотношением Si/N нанесена методом химического осаждения из газовой фазы при низком давлении. Результаты исследования вольт-амперных характеристик структур ITO/SiNx/Si-p показали, что механизм проводимости в состоянии с высоким сопротивлением определяется свойствами нитридной пленки и описывается моделью Пула-Френкеля, учитывающей перескоковый характер движения электронов между ловушками. Изменение полярности приложенного к структуре напряжения приводит к разрушению проводящих каналов в нитридной пленке и переключению структуры в состояние с высоким сопротивлением. Для структуры ITO/SiNx/Si обнаружен эффект фотопереключения, что открывает новые возможности использования мемристоров в системах кремниевой оптоэлектроники. Ключевые слова: нитрид кремния, избыток кремния, мемристор, вольт-амперные характеристики, механизмы проводимости.

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“…Heat treatment (furnace, rapid thermal or laser annealing) is one of the widely applicable ways to enhance light output from silicon nitride. In our earlier works [6][7] it was demonstrated that the optimal regime of annealing differs for the SiN x films with different stoichiometry. So, a photoluminescence (PL) intensity of Si-rich silicon nitride film substantially increases after annealing at 600 °C in Ar ambient, while the PL intensity of the N-rich film increases after annealing at 800 °C in air, though to a lesser extent.…”

mentioning

confidence: 99%

“…In order to improve light-emitting properties of the nitride films, furnace annealing was tested at first. For the sake of comparison with our previous results on furnace annealing [7], the annealing temperature was chosen 600 °C and 1100 °C for the PECVD-samples. Taking into account a high deposition temperature of LPCVD-nitride film, in this case annealing was carried out at 800 °C and at 1100 °C.…”

mentioning

confidence: 99%

Effect of thermal and pulse laser annealing on photoluminescence of CVD silicon nitride films

Пархоменко

Romanov

Makhavikou

et al. 2019

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

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The light-emitting properties of Si-rich silicon nitride films deposited on the Si (100) substrate by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) have been investigated. In spite of the similar stoichiometry (SiN1.1), nitride films fabricated by different techniques emit in different spectral ranges. Photoluminescence (PL) maxima lay in red (640 nm) and blue (470 nm) spectral range for the PECVD and LPCVD SiN1.1 films, respectively. It has been shown that equilibrium furnace annealing and laser annealing by ruby laser (694 nm, 70 ns) affect PL spectra of PECVD and LPCVD SiN1.1 in a different way. Furnace annealing at 600 °C results in a significant increase of the PL intensity of the PECVD film, while annealing of LPCVD films result only in PL quenching. It has been concluded that laser annealing is not appropriate for the PECVD film. The dominated red band in the PL spectrum of the PECVD film monotonically decreases with increasing an energy density of laser pulses from 0.45 to 1.4 J/cm2. Besides, the ablation of PECVD nitride films is observed after irradiation by laser pulses with an energy density of > 1 J/cm2. This effect is accompanied by an increase in blue emission attributed to the formation of a polysilicon layer under the nitride film. In contrast, the LPCVD film demonstrates the high stability to pulsed laser exposure. Besides, an increase in the PL intensity for LPCVD films is observed after irradiation by a double laser pulse (1.4 + 2 J/cm2) which has not been achieved by furnace annealing.

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Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films

Cited by 24 publications

References 35 publications

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

Резистивное переключение в структурах ITO/SiN-=SUB=-x-=/SUB=-/Si

Effect of thermal and pulse laser annealing on photoluminescence of CVD silicon nitride films

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