Origin of the D-Band Photoluminescence in Silicon

Weronek, K.; Weber, J.; Buchner, R.

doi:10.1007/978-3-642-76385-4_7

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…This corresponds well with previous reports stating that they have the same origin, and that D3 is a phonon replica of D4. 12,22 The MCR reveals a strong and sharp signal at 0.93-0.94 eV in wafer#3, hereafter called 'ver yintenseD3' (VID3). This signal has also been reported by Arguirov,12 and the origin of this signal will be discussed below in subsection (III B).…”

Section: A Emissionsmentioning

confidence: 99%

Distribution of radiative crystal imperfections through a silicon ingot

et al. 2013

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Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fei) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

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Section: A Emissionsmentioning

confidence: 99%

Distribution of radiative crystal imperfections through a silicon ingot

et al. 2013

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“…9] not many papers can be found in the literature which concerns photoluminescence investigations of Cu decorated dislocations in Si. The partial passivation of the D-band luminescence (especially D4 line) was observed at Cu doping of sample [10] and a complete passivation of DRL bands was achieved at higher Cu concentration [11]. In a recent contribution [12] we investigated an influence of Cu at low contamination level on the DRL.…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon

Tereshchenko

Steinman

2007

SSP

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In this paper we present a detailed investigation of peculiarities of dislocation related D1/D2 bands behavior in silicon doped with Cu. For this purpose float zone grown (FZ) p-type silicon with B-doping 2.85·1015cm-3 was deformed by 3-point bending method at 950flC up to dislocation density of 2±0.2·106 cm-2. The deformed samples were contaminated with Cu up to several concentrations from 6·1013 cm-3 to 5·1016 cm-3. The variation in dislocation related spectra were traced after different thermal treatments. A decrease of D1/D2 bands intensity in quenched samples was observed even after their storage at room temperature. Taking into account the fact that Cu has a high mobility even at room temperature the decrease of D1/D2 bands intensity can be attributed to passivation of corresponding luminescence centers by Cu atoms. The influence of Cu contamination on D2 band is much more complicated as compared to D1 band. New line in position about 883 meV was observed as a result of storage of samples at room temperature and subsequent isochronous anneals. It was observed that D1/D2 band luminescence sharply increased in 30K – 50K range in samples with high Cu doping level. In addition the line in about 830 meV position became stronger at these temperatures whereas its intensity was negligible at 6K.

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Origin of the D-Band Photoluminescence in Silicon

Cited by 2 publications

References 14 publications

Distribution of radiative crystal imperfections through a silicon ingot

Distribution of radiative crystal imperfections through a silicon ingot

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon

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