Origin of the butterfly magnetoresistance in ZrSiS

Voerman, Joris Anthonie; Mulder, Liesbeth; Boer, Jorrit Cornelis de; Huang, Yuzhen; Schoop, Leslie M.; Li, Chuan; Brinkman, Alexander

doi:10.1103/physrevmaterials.3.084203

Cited by 14 publications

(12 citation statements)

References 36 publications

(70 reference statements)

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“…However, it should be recalled that a similar angle-dependent magnetoresistance was reported also for the archetypal nodal-line Dirac semimetal ZrSiS, and the authors called such an unusual phenomenon butterfly magnetoresistance. 60 It was subsequently shown 61,62 that this un- usual MR can be understood in the scope of the Fermi surface architecture, namely, the formation of open orbits and existence of hole-and electron-like carriers, subjected to the Zeeman effect. Remarkably, the MR(θ ) data of HoPtBi, presented in a polar coordinate system (see Fig.…”

Section: F Angle Dependent Magnetoresistancementioning

confidence: 99%

Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi

et al. 2020

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Half-Heusler compounds have attracted significant attention because of their topologically non-trivial electronic structure, which leads to unusual electron transport properties. We thoroughly investigated the magnetotransport properties of high-quality single crystals of two half-Heusler phases, TbPtBi and HoPtBi, in pursuit of the characteristic features of topologically non-trivial electronic states. Both studied compounds are characterized by the giant values of transverse magnetoresistance with no sign of saturation in magnetic field up to 14 T. HoPtBi demonstrates the Shubnikov-de Haas effect with two principal frequencies, indicating a complex Fermi surface; the extracted values of carrier effective masses are rather small, 0.18 m e and 0.27 m e. The investigated compounds exhibit negative longitudinal magnetoresistance and anomalous Hall effect, which likely arise from a nonzero Berry curvature. Both compounds show strongly anisotropic magnetoresistance, that in HoPtBi exhibits a butterfly-like behavior.

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Section: F Angle Dependent Magnetoresistancementioning

confidence: 99%

Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi

et al. 2020

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“…It is known that the Fermi velocity bears strong suppression along the nodal-line direction, which makes the correction term more important. Earlier quantum oscillation measurements on ZrSiS mostly focus on the out-of-plane magnetic field configuration 26 . Pressure induced change in the Berry phase were also reported 35,36 .…”

Section: Resultsmentioning

confidence: 99%

Anisotropic Berry phase in the Dirac nodal-line semimetal ZrSiS: The effect of spin-orbit coupling

Yang

Xing

et al. 2021

Phys. Rev. B

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The topological nodal-line semimetals (NLSMs) possess a loop of Dirac nodes in the k space with linear dispersion, different from the point nodes in Dirac/Weyl semimetals. While the quantum transport associated with the topologically nontrivial Dirac fermions has been investigated extensively, features uniquely associated with the extended nodal lines remain to be demonstrated. Here, we investigate the quantum oscillations (QOs) in the nodal-line semimetal ZrSiS, with the electron transport along the c axis, and magnetic field rotating in the ab plane. The extremal orbits identified through the field orientation dependence of the QOs interlock with the nodal line, leading to a nonzero Berry phase. Most importantly, the Berry phase shows a significant dependence on the magnetic field orientation, which we argue to be due to the finite spin-orbit coupling gap. Our results demonstrate the importance of the spin-orbit coupling and the nodal-line dispersion in understanding the quantum transport of NLSMs.

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“…Another system being intensively studied is MXY (M = Zr,Hf, etc., X = Si,Ge,Sn, and Y = S,Se,Te) with a square net composed of X [13][14][15][16][17][18][19][20][21]. The intervention of the nontrivial electronic state in the experimentally observed large nonsaturating magnetoresistance (MR) and high carrier mobility has * akb@okayama-u.ac.jp attracted research interest in these materials.…”

Section: Introductionmentioning

confidence: 99%

“…The intervention of the nontrivial electronic state in the experimentally observed large nonsaturating magnetoresistance (MR) and high carrier mobility has * akb@okayama-u.ac.jp attracted research interest in these materials. Notably, the MR effect in these materials shows a strong field-angular dependence [13][14][15][16][18][19][20][21], which results in a butterflylike shape on the polar plot of the resistivity. Although active discussion on the origin of this "butterfly MR" has been performed, whether it involves the nontrivial band structure or it can be merely explained by a geometrical effect of the Fermi surface is currently unclear.…”

Section: Introductionmentioning

confidence: 99%

Magnetotransport studies of the Sb square-net compound LaAgSb2 under high pressure and rotating magnetic fields

2022

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Square-net-layered materials have attracted attention as an extended research platform of Dirac fermions and of exotic magnetotransport phenomena. In this study, we investigated the magnetotransport properties of LaAgSb 2 , which has Sb-square-net layers and shows charge density wave (CDW) transitions at ambient pressure. The application of pressure suppresses the CDWs, and above a pressure of 3.2 GPa a normal metallic phase with no CDWs is realized. By utilizing a mechanical rotator combined with a high-pressure cell, we observed the angular dependence of the Shubnikov-de Haas (SdH) oscillation up to 3.5 GPa, and we confirmed the notable two-dimensional nature of the Fermi surface. In the normal metallic phase, we also observed a remarkable field-angular-dependent magnetoresistance (MR), which exhibited a "butterflylike" polar pattern. To understand these results, we theoretically calculated the Fermi surface and conductivity tensor at the normal metallic phase. We showed that the SdH frequency and Hall coefficient calculated based on the present Fermi surface model agree well with the experiment. The transport properties in the normal metallic phase are mostly dominated by the anisotropic Dirac band, which has the highest conductivity due to linear energy dispersions. We also proposed that momentum-dependent relaxation time plays an important role in the large transverse MR and negative longitudinal MR in the normal metallic phase, which is experimentally supported by the considerable violation of Kohler's scaling rule. Although quantitatively complete reproduction was not achieved, the calculation showed that the elemental features of the butterfly MR could be reasonably explained as the geometrical effect of the Fermi surface.

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Origin of the butterfly magnetoresistance in ZrSiS

Cited by 14 publications

References 36 publications

Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi

Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi

Anisotropic Berry phase in the Dirac nodal-line semimetal ZrSiS: The effect of spin-orbit coupling

Magnetotransport studies of the Sb square-net compound LaAgSb2 under high pressure and rotating magnetic fields

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