Origin of open-circuit voltage reduction in high-mobility perovskite solar cells

Lee, Hyuna; Rana, Aniket; Kymissis, Ioannis; Kim, Chang‐Hyun

doi:10.1016/j.solener.2022.03.025

Cited by 14 publications

(7 citation statements)

References 46 publications

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“…This conclusion is consistent with the previous reports. [ 20 ] For a low forward bias voltage, the drift current induced by the built‐in electric field is so strong that it could minimize the local accumulation of charge carriers, so a high J sc can be achieved regardless of carrier mobility. However, with the increase of the forward bias voltage, the built‐in electric field is weakened, and the charge carrier transport behavior is dominated by the diffusion manner.…”

Section: Resultsmentioning

confidence: 99%

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

Zhang

Yang

et al. 2023

Advanced Energy Materials

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recently received a new world record efficiency of 25.7%, approaching that of the mainstream crystalline silicon (c-Si) SCs (26.7%). [8] However, the full potential of this type of perovskite device especially in the photovoltaic (PV) industry has not yet been realized, which needs to rely on ongoing progresses to further boost the device efficiency while maintaining/lowering the manufacturing costs with the purpose of accelerating their industrialization process and enhancing their competitiveness in the PV community. In terms of the conventional n-i-p (or p-i-n) sandwich PSCs, device efficiency depends on the electron/hole transport layers (ETLs/ HTLs) to offer a driving force for chargecarrier transport and extraction. [9] Even though a large number of ETLs and HTLs, such as TiO 2 , SnO 2 , and Spiro-OMeTAD, have been widely developed to construct the high-efficient PSCs, complex synthesis/deposition processes together with strict requirements for the preparation conditions pose a challenging to obtain the low-cost perovskite devices, which thus appeals for the structural innovations to simplify the device designs. [10][11][12] Inspired by the high-efficient c-Si solar cells, which usually fabricate a heavily doped p-type (or n-type) emitter on an n-type (or p-type) c-Si substrate to form a p + /n (or n + /p) homojunction, researchers have made many attempts to construct the self-doping perovskite by means of regulating perovskite component and annealing engineering, thus offering a chance to fabricate p-n homojunction/heterojunction PSCs. [13][14][15] The homojunction design has been considered to be a feasible strategy for the perovskite devices, which has been confirmed by a large number of simulations (Table S1, Supporting Information) and experiments. For instance, Cui et al. reported a FA 0.15 MA 0.85 PbI 3 homojunction PSC formed by a solutionprocessed n-type perovskite covered by a thermally evaporated p-type perovskite, which received an outstanding efficiency of 21.38%. Moreover, the continuous success of the perovskite self-doping technology also makes it possible for PSCs to access high efficiency even if transport layers (TLs) are absent. In terms of the TL-free PSCs, the built-in potential formed by the perovskite homojunction/heterojunction provides the devices with a driving force to address the processes of charge-carrier Although the conventional n-i-p or p-i-n perovskite solar cells (PSCs) can produce ultrahigh efficiency (>25%), complex synthesis/deposition processes together with strict requirements for preparing the hole-and electrontransport layers (HTLs and ETLs) pose a challenge to accessing low-cost perovskite devices. To address this issue, a simple strategy of employing a self-doped perovskite homojunction to replace the HTLs and ETLs has been widely proposed. However, this type of TL-free homojunction PSCs is usually endowed with poor efficiency. Here, the design principles and working mechanisms of the TL-free homojunction PSCs are clarified via a rigorous photoelectric simulation...

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Section: Resultsmentioning

confidence: 99%

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

Zhang

Yang

et al. 2023

Advanced Energy Materials

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“…[ 1–4 ] Perovskite photodiodes achieve high sensitivity and fast response due to the high mobility and long diffusion length of photo‐generated charge carriers coupled with a low exciton binding energy. [ 5–7 ] Photodiodes have a wide range of applications in diverse fields of science and technology. In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] Perovskite photodiodes achieve high sensitivity and fast response due to the high mobility and long diffusion length of photo-generated charge carriers coupled with a low exciton binding energy. [5][6][7] Photodiodes have a wide range of applications in diverse fields of science and technology. layers.…”

Section: Introductionmentioning

confidence: 99%

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Solovan

Mostovyi

Aidarkhanov

et al. 2023

Advanced Optical Materials

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In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.Currently, perovskite photodiodes based on various new synthesized materials have been developed, which in terms of responsivity and detectivity to incident light are close to commercially available photo diodes. [8][9][10][11] Radiation resistance of perovskite solar cells has attracted much attention recently and it was tested in a wide range of proton energies from 150 keV up to 68 MeV with accumulated fluences up to 10 14 protons cm −2 . [12][13][14][15][16] Interestingly the radiation resistance of hybrid perovskite materials vastly surpasses that of well-established elementary semiconductors Ge, Si, and even outperforms the relatively radiation resistant inorganic compound semiconductors such as GaAs and CdTe. [12,13,17,18] This indicates that optoelectronic and photovoltaic devices based on perovskite materials have huge potential for application in the space industry and radioactively contaminated terrestrial regions.So far, only Xiong et al. [19] reported on radiation hardness of perovskite photodiodes based on conventional low-stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10 13 protons cm −2 . The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10 12 protons cm −2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10 13 protons cm −2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

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“…In the past few years, organic–inorganic halide perovskite solar cells (PvSCs) have attracted considerable attention in the photovoltaic community due to their high absorption coefficient, longer carrier diffusion length, higher mobility, and tunable band gap . Within a brief period, the power conversion efficiency (PCE) of the PvSCs has jumped from 3.8 to 25.5% .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Highly Functional TiO₂/AZO Bilayer Electron Transport Layer for Planar Perovskite Solar Cells

Rana

Kumar

Chander

et al. 2023

ACS Appl. Electron. Mater.

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A highly functional electron transport layer (ETL) is essential for fabricating stable and efficient perovskite solar cells (PvSCs). Among the various ntype materials, mesoporous titanium dioxide (m-TiO 2 ) is the most widely used ETL in combination with a compact layer. Despite contributing to good efficiency devices, low electron mobility, and a high annealing temperature (>450 °C) to form a crystalline film in the anatase phase, the use of m-TiO 2 is a bottleneck for perovskite technology. Aluminum-doped zinc oxide (AZO) is a potential replacement for m-TiO 2 as an ETL due to its relatively high electron mobility, high transparency, and low-temperature processing. Here, we demonstrate a lowtemperature solution-processed TiO 2 /AZO bilayer thin film as ETL in a planar PvSCs configuration, which exhibits a power conversion efficiency of 13.94% with a J SC of 19.49 mA/cm 2 , a V OC of 1.05V, and a FF of 68% with a pixel area of 0.25 cm 2 . The unencapsulated TiO 2 /AZO-ETL-based PvSCs retained 70% of their initial efficiency after 1000 h in an ambient atmosphere. Our studies demonstrated that the solution-processed TiO 2 /AZO bilayer ETLs provide a promising approach for developing low-temperature, high-performance, and stable planar PvSCs.

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Origin of open-circuit voltage reduction in high-mobility perovskite solar cells

Cited by 14 publications

References 46 publications

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Fabrication of a Highly Functional TiO₂/AZO Bilayer Electron Transport Layer for Planar Perovskite Solar Cells

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Origin of open-circuit voltage reduction in high-mobility perovskite solar cells

Cited by 14 publications

References 46 publications

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

Fabrication of a Highly Functional TiO2/AZO Bilayer Electron Transport Layer for Planar Perovskite Solar Cells

Contact Info

Product

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About

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Fabrication of a Highly Functional TiO₂/AZO Bilayer Electron Transport Layer for Planar Perovskite Solar Cells