Origin of N 1s spectrum in amorphous carbon nitride obtained by X-ray photoelectron spectroscopy

Ohta, Riichiro; Lee, K.H.; Saito, Nagahiro; Inoue, Yasushi; Sugimura, Hiroyuki; Takai, Osamu

doi:10.1016/s0040-6090(03)00457-7

Cited by 39 publications

(32 citation statements)

References 42 publications

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“…The D-band is sensitive to the size of graphite-like microdomains. An in-depth Raman study of our films revealed neither G-nor D-band, which gives grounds to attribute the 284.5-eV component of the C 1s level to the bound state C(sp 3 )-N. Moreover, the lack of C(sp 2 )-N and C(sp)-N bonds is confirmed by the IR absorption spectrum, in which the corresponding bands at 1600 and 2200 cm -1 are missing [12].…”

Section: Resultsmentioning

confidence: 60%

“…The 398.3-eV peak was attributed by Xing-cheng Xiao et al [6] to nitrogen atoms coordinated by sp 3 carbons on the grounds that, with increasing substrate temperature, the intensity of this emission drops, while the intensity of the 400-eV emission, arising from the thermodynamically more stable configuration N-C(sp 2 ), increases. Le Normand et al [11] assigned the 399-eV emission to the C(sp 3 )-N bonds in β-C 3 N 4 , but Ohta et al [12] considered that assignment questionable because those bonds have a lower energy owing to the weak electronic polarization of their chemical structure. The C-N bond configuration may be influenced by the lone electron pair of the nitrogen atom [13,14].…”

Section: Resultsmentioning

confidence: 99%

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Plasma Deposition and Properties of Silicon Carbonitride Films

et al. 2005

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A variety of advanced analytical techniques were used to characterize silicon carbonitride films grown from new volatile nitrogen-rich silyl derivatives of asymmetrical dimethylhydrazine: (CH 3 ) 2 HSiNHN(CH 3 ) 2 (DMDMSH) and Me 2 Si(NHNMe 2 ) 2 (bisDMHDMS). The results demonstrate that the films contain only Si-C, Si-N, and C( sp 3 )-N bonds, in relative amounts that depend on the molecular structure of the precursor and deposition conditions. The Si-C/[Si-N + C( sp 3 )-N] ratio is considerably larger in the films grown from DMDMSH. The data obtained by a variety of spectroscopic techniques provide solid evidence that some of the films contain C( sp 3 )-N bonds, characteristic of superhard materials, and that the films have a complex, framework structure, rather than being a mixture of Si 3 N 4 , SiC, and C 3 N 4 . The structure of the films depends on the N : Si ratio in the precursor: at N : Si = 2, the films are amorphous and contain nanocrystalline inclusions with a tetragonal structure; at N : Si = 4, the films are purely amorphous. The ability to control the chemical composition and structure of deposits allowed us to produce films with various physicochemical and electrical properties.

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Plasma Deposition and Properties of Silicon Carbonitride Films

et al. 2005

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“…Computational simulations of XPS spectra have been recently utilized to clarify the defective structures of graphene-related materials [12][13][14][15][16][17][18][19][20]. Since Proctor and Sherwood [13] as well as Boutique et al [14] have started computational analyses of functional groups on carbon materials in the 1980s, several groups have reported assignments of defective structures of graphene-related materials using calculation [15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…Since Proctor and Sherwood [13] as well as Boutique et al [14] have started computational analyses of functional groups on carbon materials in the 1980s, several groups have reported assignments of defective structures of graphene-related materials using calculation [15][16][17][18][19][20]. Until the present, XPS analysis of pentagons on graphene has not been reported except three papers [12,20,21] to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Spectral change of simulated X-ray photoelectron spectroscopy from graphene to fullerene

et al. 2015

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“…As for the high-resolution N1s spectrum of sample 2, it can be deconvoluted into five peaks: 397.6 (A), 398.5 (B), 399.4 (C), 400.2 (D), and 401.2 eV (E), as marked in Fig. 2d, which can be respectively assigned to N in a beta-C 3 N 4 structure, 34 N in a graphite-like structure, pyridiniclike N, pyrrolic-like N, and N-H groups. The relative contents of A, B, C, D, and E are ca.…”

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confidence: 99%