Origin of luminescence from<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>nanostructures studied using x-ray absorption and luminescence spectroscopy

Zhou, Xingtai; Heigl, F.; Ko, J. Y. Peter; Murphy, Michael W.; Zhou, Jigang; Regier, Tom; Blyth, R. I. R.; Sham, T. K.

doi:10.1103/physrevb.75.125303

Cited by 57 publications

(45 citation statements)

References 40 publications

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“…In case of Ga 2 O 3 nanocrystalline film, the relative intensity of UV luminescence (370 nm) is greater than that of blue luminescence (445 nm) while, in case of 700 • C annealed film the blue luminescence is stronger than that of UV luminescence. The affinity of AOT/Ga 2 O 3 nanoparticles is high and therefore the surfactant molecules are bound to the surface of nanoparticles for as deposited Ga 2 O 3 nanocrystalline film, which may result in the reduction of intensity of the emission from the core (blue luminescence) and enhances the intensity of the emission from impurity phase (UV luminescence) rather than the dominantly crystalline β-phase [38]. However, 700 • C annealed film, AOT molecules were burnt out and as a result the intensity of blue luminescence increases as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ga2O3 and GaN nanocrystalline film: Reverse micelle assisted solvothermal synthesis and characterization

Sinha

Ganguli

Chaudhuri

2008

Journal of Colloid and Interface Science

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Section: Resultsmentioning

confidence: 99%

Ga2O3 and GaN nanocrystalline film: Reverse micelle assisted solvothermal synthesis and characterization

Sinha

Ganguli

Chaudhuri

2008

Journal of Colloid and Interface Science

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“…26 It has successfully been used to study the chemical origin of luminescence in porous Si, Si nanowires, SnO 2 nano-ribbons, Ga 2 O 3 nanostructures, and ZnS nanostructures as well as ZnO-ZnS and Si-CdSe nano-heterostructures. [27][28][29][30][31][32][33][34] In XEOL, one monitors the intensity of the luminescent bands as the X-ray energy is raised above the core level binding energy of a particular element in the system, thereby exciting an electron from a core level to a previously unoccupied state in the conduction band. The decay of the excited state can give rise to more intense luminescence via energy transfer to the optical channel.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and optical properties of CdSxSe1−x solid solution nanostructures from X-ray absorption near edge structure, X-ray excited optical luminescence, and density functional theory investigations

Murphy

Yiu

Ward

et al. 2014

Journal of Applied Physics

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Articles you may be interested in Ca K-edge X-ray absorption fine structure in BaTiO3-CaTiO3 solid solutions J. Appl. Phys. 113, 044106 (2013); 10.1063/1.4784226 In situ near-edge x-ray absorption fine structure spectroscopy investigation of the thermal defunctionalization of graphene oxide J. The electronic structure and optical properties of a series of iso-electronic and iso-structural CdS x Se 1Àx solid solution nanostructures have been investigated using X-ray absorption near edge structure, extended X-ray absorption fine structure, and X-ray excited optical luminescence at various absorption edges of Cd, S, and Se. It is found that the system exhibits compositions, with variable local structure in-between that of CdS and CdSe accompanied by tunable optical band gap between that of CdS and CdSe. Theoretical calculation using density functional theory has been carried out to elucidate the observations. It is also found that luminescence induced by X-ray excitation shows new optical channels not observed previously with laser excitation. The implications of these observations are discussed. V C 2014 AIP Publishing LLC.

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“…Indeed, it was shown that amorphous GaO x shell over crystalline Ga 2 O 3 nanowire is responsible both for "red" luminescence in the 1.7-1.8 eV range, 28 and for UV luminescence in the 3-4 eV range. To confirm our hypothesis, we measure PL spectrum of GaA nanowire using UV (3.81 eV) laser excitation.…”

Section: Figmentioning

confidence: 99%

Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

Alekseev

Dunaevskiy

Kirilenko

et al. 2017

Journal of Applied Physics

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We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zincblende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaO x . The latter compound is responsible for appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of β-Ga 2 O 3 nanocrystals proceed on surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with formation of β-Ga 2 O 3 nanocrystals occurs.Observed transformation of WZ-GaAs to β-Ga 2 O 3 nanocrystals presents an available way for creation of axial and radial heterostuctures ZB-GaAs/β-Ga 2 O 3 for optoelectronic and photonic applications.

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Origin of luminescence fromGa2O3nanostructures studied using x-ray absorption and luminescence spectroscopy

Cited by 57 publications

References 40 publications

Ga2O3 and GaN nanocrystalline film: Reverse micelle assisted solvothermal synthesis and characterization

Ga2O3 and GaN nanocrystalline film: Reverse micelle assisted solvothermal synthesis and characterization

Electronic structure and optical properties of CdSxSe1−x solid solution nanostructures from X-ray absorption near edge structure, X-ray excited optical luminescence, and density functional theory investigations

Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

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