Origin ofA- orB-typeNiSii2 determined by inin situtransmission electron microscopy and diffraction during growth

Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

“…The difference between interfacial energies of type-A and type-B interfaces is expected to be rather small since only differences in the third nearest neighbors and beyond are involved [21,22]. The presence of type-B interfaces is directly related to the NW formation and seems to be influenced by the RDE temperature.…”

“…Islands of one type have a rectangular shape with low aspect ratio viewed from the top. Such rectangular islands are constituted of one (001) surface and four type-A NiSi 2 /{111}Si interfaces since the NiSi 2 /(111)Si interfaces are more stable than the NiSi 2 /(100)Si interfaces for the epitaxial growth of NiSi 2 on Si [21,22]. Islands of another type have NW shape with considerable aspect ratios.…”

Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes

“…And only one type of interface exists between the Fe 13 Ge 8 island and the Ge substrate. It can be concluded that different types of island morphology formed in this study are not due to type-A or type-B interface formation as predicted by the Gibson model [23,24].…”

“…The Gibson model elucidated that in such systems, the so-called type-A (square shape) and type-B (elongated shape) island formation is due to interface structure differences [23,24]. In type-A structures, grown islands have a continuous extended structure similar to that of substrate.…”

Silicide formation in contacts to Si nanowires

“…Activation energies commonly observed for the formation of d-Ni 2 Si are about 1.3-1.5 eV/atom [46][47][48]. In some cases, where interfacial energy is a dominating factor in phase formation, NiSi 2 is observed to be the first phase formed [49,50], though h-Ni 2 Si has also been observed as the first phase to form in cases where very thin films are reacted with (111) Si [51]. Epitaxial h-Ni 2 Si is only observed on planar (111) Si wafers because of the excellent lattice match and similarities in symmetry between the (0002) h-Ni 2 Si and (111) Si planes.…”