Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes

Li, Zhipeng; Tok, Eng-Soon; Foo, Y. L.

doi:10.1016/j.materresbull.2013.04.037

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“…[1][2][3][4][5][6][7][8][9]. This growth mode has been suggested to occur through the diffusion of the deposited material into the substrate.…”

Section: Introductionmentioning

confidence: 99%

Large interface diffusion in endotaxial growth of MnP films on GaP substrates

Nateghi

Ménard

Masut

2014

Journal of Applied Physics

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The metal organic vapor deposition of MnP films on GaP (100) substrates is shown to have a substantial endotaxial component. A study of the growth time evolution of the endotaxial depths of MnP grains reveals a diffusion-controlled growth with a relatively large diffusion coefficient of Mn in GaP. The value (2.2 ± 1.5) × 10−15 (cm2/s) obtained at 650 °C is at least two orders of magnitude larger than the reported Mn diffusion in bulk GaP. GaP surface mounds provide further indirect evidence that this large diffusion coefficient is concurrent with the out-diffusion of Ga atoms at the growing MnP/GaP interface. No trace of dislocations could be observed at or near this interface, which strongly suggests that Mn diffusion occurs through vacant sites generated by the difference between the crystallographic structures of MnP and GaP.

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“…[1][2][3][4][5][6][7][8][9]. This growth mode has been suggested to occur through the diffusion of the deposited material into the substrate.…”

Section: Introductionmentioning

confidence: 99%