Origin of highly spatially selective etching in deeply implanted complex oxides

Ofan, Avishai; Gaathon, Ophir; Vanamurthy, Lakshmanan; Bakhru, Sasha; Bakhru, H.; Evans‐Lutterodt, K.; Osgood, R. M.

doi:10.1063/1.3013821

Cited by 19 publications

(5 citation statements)

References 18 publications

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“…2(a) and 2(b) are obtained after lowtemperature annealing; the restoration of the signal toward that of the virgin sample shows that the irradiation damage can be, in part, removed by annealing. Annealing-induced "repair" of irradiation damage of LiNbO 3 has been reported extensively in previous measurements [19,20]. In part this "repair" is due to diffusive dissipation of interstitial He in a heated crystal.…”

Section: Resultsmentioning

confidence: 80%

A micro-Raman spectroscopic investigation of He^+-irradiation damage in LiNbO_3

Huang¹,

Dadap²,

Gaathon³

et al. 2013

Opt. Mater. Express

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Imaging micro-Raman spectroscopy is used to investigate the materials physics of radiation damage in congruent LiNbO 3 as a result of high-energy (~MeV) He + irradiation. This study uses a scanning confocal microscope for high-resolution three-dimensional micro-Raman imaging along with reflection optical microscopy (OM), and scanning electron microscopy (SEM). The tight optical excitation beam in the Raman system allows spatial mapping of the Raman spectra both laterally and normal to the irradiation axis with ≤1 μm resolution. Point defects and compositional changes after irradiation and surface deformation including blistering and microstress are observed in the stopping region. We demonstrate that the probed area of the damaged region is effectively "expanded" by a beveled geometry, formed through off-angle polishing of a crystal facet; this technique enables higher-resolution probing of the ion-induced changes in the Raman spectra and imaging of dislocation line defects that are otherwise inaccessible by conventional probing (depth and edge scan). Twodimensional (2D) Raman imaging is also used to determine the defect uniformity across an irradiated sample and to examine the damage on a sample with patterned implantation. The effects of different He + doses and energies, together with post-irradiation treatments such as annealing, are also discussed.

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Section: Resultsmentioning

confidence: 80%

A micro-Raman spectroscopic investigation of He^+-irradiation damage in LiNbO_3

Huang¹,

Dadap²,

Gaathon³

et al. 2013

Opt. Mater. Express

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“…Note that prior literature results also suggest that the involvement of different defect-generation mechanisms such as using light-ion or swift heavy-ion irradiation may result in somewhat different etching results. For example, an etching rate of $3.2 ± 0.3 lm/min in He + -irradiated LiNbO 3 after thermal activation was reported [12].…”

Section: Resultsmentioning

confidence: 97%

“…In LiNbO 3 , these defects manifest themselves as a striking series of lines at the surface arranged parallel to the threefold lattice-symmetry planes. In addition, the density of these extended defects reaches a maximum after thermally activated dislocation motion, activated during annealing at $250°C [12]. The existence of these local defect networks enhances an anomalously high selective etch rate ($lm/ min) [12]; this rate is $10 3 Â greater than the etch rate in the remainder of the sample.…”

Section: Resultsmentioning

confidence: 98%

“…In addition, the density of these extended defects reaches a maximum after thermally activated dislocation motion, activated during annealing at $250°C [12]. The existence of these local defect networks enhances an anomalously high selective etch rate ($lm/ min) [12]; this rate is $10 3 Â greater than the etch rate in the remainder of the sample. Note that this localized selective etching enables the use of the method of crystal ion slicing [13] to fabricate freestanding thin films -with films typically of thicknesses of 2-25 lm.…”

Section: Resultsmentioning

confidence: 98%

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Characterization of selective etching and patterning by sequential light- and heavy-ion irradiation of LiNbO3

et al. 2015

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a b s t r a c tThe induced selective etching properties of LiNbO 3 in a sample subjected to ion processing using sequential light-and heavy-ion irradiation are investigated and discussed. Through the use of TEM and SEM, the lattice structure at the amorphous-crystalline interface is examined after heavy ion exposure and it is found that single-energy amorphizing irradiation results in undercut etching at the interface, while multiple-energy irradiation yields sharper features. Such sequential-irradiation process based on both lightand heavy-ion irradiation enables ready fabrication of concomitant high-resolution patterning and exfoliation of structured freestanding thin films.

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“…Subsequently the samples were annealed at 250°C for 30 minutes for thermal activation and then placed in a ~5% hydrofluoric (HF) acid etching bath for several hours. Because of the high etch selectivity in the buried sacrificial layer [16], the etching results in exfoliation of a ~10 μmthick single-crystal-LN film. Post lift-off annealing (PLA) was then carried out in a furnace at 600°C for 10 hours in a laboratory-atmosphere ambient to remove any residual stress [17].…”

Section: Experimental and Resultsmentioning

confidence: 99%

Helium-ion-induced radiation damage in LiNbO_3 thin-film electro-optic modulators

et al. 2014

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Helium-ion-induced radiation damage in a LiNbO3-thin-film (10 μm-thick) modulator is experimentally investigated. The results demonstrate a degradation of the device performance in the presence of He(+) irradiation at doses of ≥ 10(16) cm(-2). The experiments also show that the presence of the He(+) stopping region, which determines the degree of overlap between the ion-damaged region and the guided optical mode, plays a major role in determining the degree of degradation in modulation performance. Our measurements showed that the higher overlap can lead to an additional ~5.5 dB propagation loss. The irradiation-induced change of crystal-film anisotropy(n(o)-n(e))of ~36% was observed for the highest dose used in the experiments. The relevant device extinction ratio, V(π)L, and device insertion loss, as well the damage mechanisms of each of these parameters are also reported and discussed.

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Origin of highly spatially selective etching in deeply implanted complex oxides

Cited by 19 publications

References 18 publications

A micro-Raman spectroscopic investigation of He^+-irradiation damage in LiNbO_3

A micro-Raman spectroscopic investigation of He^+-irradiation damage in LiNbO_3

Characterization of selective etching and patterning by sequential light- and heavy-ion irradiation of LiNbO3

Helium-ion-induced radiation damage in LiNbO_3 thin-film electro-optic modulators

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