Characterization of selective etching and patterning by sequential light- and heavy-ion irradiation of LiNbO3

Abstract

a b s t r a c tThe induced selective etching properties of LiNbO 3 in a sample subjected to ion processing using sequential light-and heavy-ion irradiation are investigated and discussed. Through the use of TEM and SEM, the lattice structure at the amorphous-crystalline interface is examined after heavy ion exposure and it is found that single-energy amorphizing irradiation results in undercut etching at the interface, while multiple-energy irradiation yields sharper features. Such sequential-irradiation process based on both lightand heavy-ion irradiation enables ready fabrication of concomitant high-resolution patterning and exfoliation of structured freestanding thin films.

Omni‐functional crystal: Advanced methods to characterize the composition and homogeneity of lithium niobate melts and crystals

“…[ 65 ] SEM‐EDS combined with XRD mapping can confirm the presence of lattice damage, deformation, and stress in the structure of doped elements, [ 66 ] and it can observe how the doped elements are distributed in the structure. [ 67 ] SEM has been widely used to investigate the domain structures of LN ferroelectrics. Since the 1970s, it has also been used to image ferroelectric domains.…”

“…In addition to observing the sample morphology and internal structure, TEM can also capture high‐resolution projection images via selected area electron diffraction (SAED). Because of this feature, TEM can be used to observe the morphology and structure of LN nanoparticles [ 67 ] and calculate the particle size from the measured results. [ 76 ] The patterns shown by SAED maps can also be used to determine and confirm the morphological characteristics of mechanical deformations such as twinning.…”