2013
DOI: 10.1021/am3022703
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Origin of Bias-Stress Induced Instability in Organic Thin-Film Transistors with Semiconducting Small-Molecule/Insulating Polymer Blend Channel

Abstract: The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this… Show more

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Cited by 31 publications
(20 citation statements)
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“…During periods of UV exposure (i.e., the shaded areas in Figure 4a,b), both types of devices maintained relatively constant current levels. This implies that the number of both electrons and holes trapped at the PMMA/OSC interface of each UV light-exposed device was not exceptionally large in these devices, even though the PMMA-based organic fieldeffect transistors were reported to have hole trapping properties [30,31]. After the UV light was turned off, the drain current immediately returned to its initial state.…”
Section: Resultsmentioning
confidence: 98%
“…During periods of UV exposure (i.e., the shaded areas in Figure 4a,b), both types of devices maintained relatively constant current levels. This implies that the number of both electrons and holes trapped at the PMMA/OSC interface of each UV light-exposed device was not exceptionally large in these devices, even though the PMMA-based organic fieldeffect transistors were reported to have hole trapping properties [30,31]. After the UV light was turned off, the drain current immediately returned to its initial state.…”
Section: Resultsmentioning
confidence: 98%
“…Photoexcited charge‐collection spectroscopy (PECCS) is a powerful method for the direct probing of the interfacial traps that arise between the OSC layer and the gate dielectric layer . PECCS can be used to measure the gradual recovery of the V th shift under monochromatic illumination.…”
Section: Experimental Methods For Investigating Charge Trapsmentioning
confidence: 99%
“…By using PECCS, Im and co‐workers have succeeded to quantify the interfacial trap states in various organic and inorganic semiconductor FETs, such as pentacene, poly(3‐hexylthiophene), poly(3,3'''‐didodecylquaterthiophene), and poly(didodecyl‐quaterthiophene‐ alt ‐didodecylbithiazole), TIPS‐pentacene, and zinc oxide (ZnO) . Recently, Kang et al utilized PECCS for n‐type conjugated polymer OFETs to investigate the correlation between the orientation of conjugated molecules and the bias stress stability .…”
Section: Experimental Methods For Investigating Charge Trapsmentioning
confidence: 99%
“…Second, the amorphous polymers can introduce both lateral and vertical phase segregation between the polymers and semiconductors [45]. For example, various polymers have been reported to cause vertical phase segregation with the organic semiconductors, including poly(methyl methacrylate) (PMMA) [46][47][48], poly (alpha-methylstyrene) (PαMS) [49][50][51][52][53][54][55][56], polystyrene (PS) [57][58][59], and poly(triarylamine) (PTAA) [60][61][62][63][64]. A group of polymers, including poly(ethyl acrylate) (PEA), poly(butylacrylate) (PBA), and poly(2-ethylhexyl acrylate) (P2EHA), were reported with the capability to switch between lateral phase segregation and vertical phase segregation [45].…”
Section: Comparison Of Various Additives 211 Polymeric Additivesmentioning
confidence: 99%