Orientational Dependence of Magnetic Tunnel Junctions Using an Fe3O4 Layer.

Takeuchi, Manabu; Hiramoto, Makoto; Matsukawa, Nozomu; Adachi, Hiroto; Okamura, S.; Shiosaki, Tadashi; Sakakima, H.

doi:10.3379/jmsjmag.25.155

Cited by 3 publications

(1 citation statement)

References 9 publications

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“…Driven by the desire to incorporate this material into magnetic devices, epitaxial growth of Fe 3 O 4 has been achieved on (0 0 1) MgO substrates using a wide variety of deposition techniques. Pulsed laser deposition growth with substrate temperature between 200 and 500 8C has yielded good, bulk-like properties [185][186][187][188][189][190]. A comparison of magnetic properties for bulk Fe 3 O 4 and various thin films is shown in Fig.…”

Section: Ferritesmentioning

confidence: 99%

Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

Martin

Chu

Ramesh

2010

Materials Science and Engineering: R: Reports

596

402

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The growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed. The evolution of synthesis techniques and how advances in in situ characterization have enabled significant acceleration in improvements to these materials are described. Methods for enhancing the properties of functional materials or creating entirely new functionality at interfaces are covered, including strain engineering and layering control at the atomic-layer level. Emerging applications of these functional oxides such as achieving electrical control of ferromagnetism and the future of these complex functional oxides is discussed.

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Section: Ferritesmentioning

confidence: 99%

Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

Martin

Chu

Ramesh

2010

Materials Science and Engineering: R: Reports

596

402

View full text Add to dashboard Cite

show abstract

Synthesis and properties of epitaxial electronic oxide thin-film materials

Norton

2004

Materials Science and Engineering: R: Reports

301

126

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Development of half-metallic ultrathin Fe3O4 films for spin-transport devices

Soeya

Hayakawa

Takahashi

et al. 2002

Applied Physics Letters

193

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We attempted to fabricate a high-quality Fe3O4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 Å). X-ray diffractometry showed that our prepared Fe3O4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438 emu/cm3, ∼10 000 μ Ω cm, and ∼110 K. These values were comparable to those of the Fe3O4 bulk. Our experimental results suggested that a high-quality Fe3O4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 Å).

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Orientational Dependence of Magnetic Tunnel Junctions Using an Fe3O4 Layer.

Cited by 3 publications

References 9 publications

Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

Synthesis and properties of epitaxial electronic oxide thin-film materials

Development of half-metallic ultrathin Fe3O4 films for spin-transport devices

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