Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

Phan, Hoang‐Phuong; Qamar, Afzaal; Dao, Dzung Viet; Dinh, Toan; Wang, Li; Han, Jisheng; Tanner, Philip; Dimitrijev, Sima; Nguyen, Nam‐Trung

doi:10.1039/c5ra10144a

Cited by 24 publications

(19 citation statements)

References 35 publications

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“…A thin 3C-SiC film with its thickness of 300 nm was epitaxially grown on a 150 mm diameter Si wafer using low pressure chemical vapour deposition 31 . The film was in situ doped using Al dopants.…”

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confidence: 99%

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Phan

Dinh

Kozeki

et al. 2016

Applied Physics Letters

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This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.Strain sensors have been widely employed in numerous applications including bio-analysis, inertia sensing, and structural health monitoring (SHM)1-4 . For instance, in SHM, strain sensors can detect crack generation, delamination between layers, and thermal expansions due to the changes in temperature 5,6 . Among several methods to detect strain, the piezoresistive effect in semiconductors has been widely adopted due to its high sensitivity and simple readout circuitry 7-10 . Recent studies have been focusing on enhancing the sensitivity of piezoresistive strain sensors by down-scaling piezoresistive elements to a nanometer scale 11 . He and Yang reported a giant longitudinal piezoresistive coefficient of −3550 × 10 −11 Pa −1 in silicon nanowires, which is at least one order of magnitude large than that of bulk Si material 12 . The enhancement of the piezoresistive effect in Si nanowires was hypothesized to be caused by a piezopinch phenomenon 13 . Following the work of He and Yang, a large number of studies have been carried out to investigate the piezoresistive effect of nanowires fabricated using different methods and aligned in several crystallographic orientations. Milner et al. reported the giant piezoresistive effect in Si micro and nano wires fabricated using a topdown process 14 . In addition, the authors also counteracted the hypothesis of the piezopinch phenomenon, and suggested that the dynamic properties of surface charge on micro/nanowires could be the main reason causing the significant change in the piezoresistance of nanowires 11,14 . Nevertheless, the electrical conductance of Si nanowires, using the dynamic properties of surface state, varies with time, which is not a desirable property for practical strain sensing applications. Additionally, in contrast to the results of He and Yang, the piezoresistive effect in both bottom-up grown Si nanowires 15,16 , and top-down fabricated Si 17-19reported recently, did not show significant improvement in sensitivity compared to when bulk materials are used. In another study, Nakamura et al. theoretically investigated the influenc...

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confidence: 99%

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Phan

Dinh

Kozeki

et al. 2016

Applied Physics Letters

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“…To conduct this experiment, single‐crystalline 3C‐SiC thin films were grown on 6‐inch Si(100) substrates using a low pressure chemical vapor deposition process (LPCVD) . Silane (SiH 4 ) and propene (C 3 H 6 ) were employed as the precursors in the hot‐wall furnace at 1250 °C.…”

Section: Resultsmentioning

confidence: 99%

Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement

Phan

Nguyen

Dinh

et al. 2018

Physica Status Solidi (a)

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This work reports the strain effect on the electrical properties of highly doped n‐type single crystalline cubic silicon carbide (3C‐SiC) transferred onto a 6‐inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C‐SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n‐type 3C‐SiC. Our finding for the large gauge factor in n‐type 3C‐SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC‐on‐glass based MEMS applications.

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“…To solve these bottlenecks, cubic silicon carbide thin films, which can be grown on a silicon substrate have been deployed as an excellent platform for MEMS [5][6][7][8]. Epitaxial SiC films grown on large scale Si wafers not only take advantage of low cost Si wafers, but also simplify the fabrication process of SiC MEMS.…”

Section: Introductionmentioning

confidence: 99%

Formation of silicon carbide nanowire on insulator through direct wet oxidation

et al. 2017

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a b s t r a c tSilicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C-SiC) on silicon dioxide (SiO 2 ) by using silicon wet-thermaloxidation. Experimental data confirmed that SiO 2 was successfully formed underneath of 300 nm width SiC nanowires, while the properties of SiC was almost unaffected during the oxidation process. This simple technique will open the pathway to the development of SiCOI (SiC on insulator) based electrical and optical applications.

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Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

Abstract: This study reports on the orientation dependence and shear piezoresistive coefficients of the pseudo-Hall effect in p-type single crystalline 3C–SiC.

Cited by 24 publications

References 35 publications

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement

Formation of silicon carbide nanowire on insulator through direct wet oxidation

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