Formation of silicon carbide nanowire on insulator through direct wet oxidation

Abstract

a b s t r a c tSilicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C-SiC) on silicon dioxide (SiO 2 ) by using silicon wet-thermaloxidation. Experimental data confirmed that SiO 2 was successfully formed underneath of 300 nm width SiC nanowires, while the properties of SiC was almost unaffected during the oxidation process. This simple technique will open the pathway to the development of SiCOI (SiC on insulator) based electrical and optical applications.

Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications

“…As such, ultrathin silicon nitride membranes have been employed as a substrate platform for nanomachined solid-state nanopores using focused transmission electron microscopy (TEM) beam, for DNA/protein/virus sequencing and translocation. − However, the presence of nitrogen in those nitrogen-based materials may cause unexpected interactions with nitride-containing objects, which typically exist in biocells. Possessing chemical inertness, good bio-MEMS compatibility and integration, ,− SiC materials have attracted a great deal of interest toward biological applications. − The use of SiC-based devices yields long-term stability for in vitro studies, enabling the development of integrated bio lap-on-chip while minimizing side effects. However, to date, because of difficulties in the deposition and fabrication processes, there are limited reports on sub-hundred-nanometers SiC membranes that are employed for cell culture.…”