Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

Bhat, R.; Caneau, C.; Zah, Chung−En; Koza, M.A.; Bonner, W. A.; Hwang, D.M.; Schwarz, S. A.; Menocal, S.G.; Favire, F.G.

doi:10.1016/0022-0248(91)90556-k

Cited by 93 publications

(31 citation statements)

References 18 publications

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“…The energy bandgap of the InxGa ~_xAs layers is shifted with respect to that of GaAs by the indium concentration [14] and by the biaxial compressive stress, parallel to the (100) plane, generated by the mismatch between In ~Ga 1 _ x As and GaAs, described by the deformation potential theory [15][16][17][18]. The total shift of the bandgap in InxGa ~ _~As epitaxial layers below the critical layer thickness as a function of the indium concentration x in the layer is given in first-order approximation for small values of x by [4,19,20] AUg,total ~--1.17x (eV).…”

Section: Methodsmentioning

confidence: 99%

“…It is known that the incorporation process at the surface is influenced by the degree of misorientation of the substrate, resulting in differences in the lateral growth rate and in the impurity concentration [4][5][6][7][8]. An overview of studies on orientation dependence of impurity incorporation during MOVPE growth of III-V compounds has been given by Kondo et al [9].…”

Section: Introductionmentioning

confidence: 99%

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Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Nijenhuis¹,

Hageman²,

Giling³

1996

Journal of Crystal Growth

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The incorporation of indium during growth of InxGa ~ _xAS (with x < 5 × 10 -3) by metalorganic vapour phase epitaxy on GaAs substrates with orientations vicinal to (100) has been studied as a function of the growth temperature, the input mole fraction of trimethylindium (TMI) and the misorientations of the substrates towards (011) and (01~). The average apparent activation energy for indium incorporation is found to be 9.7 kcal mol-J, which is explained by the presence of indium adducts in the gas phase at low temperatures which decompose at higher growth temperatures. The differences in indium concentrations as a function of the direction and the degree of the misorientation are explained by considering the incorporation processes at the group III sublattice sites at the steps, thereby taking into account the arsenic coverage of the surface. The behaviour of the indium incorporation as a function of the misorientation is described by diffusion of growth species towards the steps, according to the BCF theory, which is counteracted by preferential arsenic desorption from the step edges.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Nijenhuis¹,

Hageman²,

Giling³

1996

Journal of Crystal Growth

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“…The facets strongly affect the shell growth rates [78,79] (paper III). From thin film experiments it is also known that the substrate orientation and miscut can increase or decrease the dopant incorporation by one order of magnitude [80].…”

Section: Incorporation In Radial Growthmentioning

confidence: 99%

Doping of semiconductor nanowires

2011

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9Populärvetenskaplig sammanfattning 11List of papers 15 AbstractIn this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. After growth the nanowires were characterized using various techniques, including photoluminescence, transmission electron microscopy and electrical measurements of contacted nanowires. Different III-V materials were studed, both binary materials such as InP and GaAs, and ternary materials such as Ga x In 1-x P. To achieve p-and n-doping, different precursors were employed.The results show that successful p-and n-doping can be achieved in many materials. The in situ doping is shown to affect the nanowire growth strongly, but differently depending on the combination of material and dopant. The main effects are related to the growth rate and the crystal structure. It is shown that the ndopant H 2 S increases the growth rate and induces wurtzite crystal structure in InP nanowires, while the p-dopant DEZn gives an unchanged growth rate with zinc blende crystal structure. En solcells förmåga att omvandla solljus till elektricitet kallas för verkningsgrad. Idag baseras de flesta solceller på grundämnet kisel, vilket är samma material som är basen för elektroniken i alla datorer. Detta material ger en medelmåttig verkningsgrad för ett medelmåttigt pris. För att göra solceller ännu mer användningsbara utvecklar många forskare och företag nya sorters solceller, som är billigare eller bättre än kiselceller. De mest effektiva solcellerna görs av så kallade III-V ("tre-fem") material, som kan ge ungefär dubbelt så mycket eleffekt som kiselceller. Tyvärr är III-V material dyra, vilket gör dessa solceller olönsamma för de flesta tillämpningar.Ett möjligt sätt att sänka kostnaderna är att göra III-V materialet i form av små, avlånga kristaller som kallas nanotrådar. Dessa nanotrådar är ungefär en tusendel så tjocka som ett hårstrå, vilket betyder att deras diameter är ungefär samma som ljusets våglängd. Mängden III-V material som används kan då minskas på två sätt. Dels kan man använda ett annat, billigare material som bärande substrat, dels behöver man bara täcka ungefär en tiondel av ytan. Nanotrådarna fungerar som små antenner som effektivt fångar in solljuset. I en solcell absorberas ljusenergin av elektroner, som tvingas i en bestämd riktning vilket skapar en elektrisk ström. För att göra detta används så kallad dopning, 13 vilket innebär att man stoppar in kontrollerade mängder av speciella föroreningar i den annars mycket rena kristallen. Med n-dopning skapar man ett överskott av elektroner, och med p-dopning skapar man ett underskott. Kombinerar man ett pdopat och ett n-dopat område får man en p-n övergång, som också kallas en diod. Det är i övergången mellan p-dopning och n-dopning som elektronerna tvingas i en speciell riktning, nämligen mot den n-dopade sidan. För att nanotrådarna ska fungera som solceller måste dä...

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“…It was observed that the net S and Si donor concentrations were greater on the B surface, while the net Zn acceptor concentration was less on the B face than on the A one. 22 In InP, incorporation of Fe and Si on different crystal orientations has revealed species competition for the substitutional In lattice site, with the Si atom being the preferred species. 23 More importantly, the understanding that Fermi level pinning controls species activation emphasizes the need to understand the role of vicinal surfaces.…”

Section: Introductionmentioning

confidence: 99%

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Grenko

Reynolds

Barlage

et al. 2010

Journal of Elec Materi

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We report on the growth of Al 0.25 Ga 0.75 N/GaN heterostructures grown on low dislocation density vicinal surfaces of semi-insulating c-axis GaN substrates. Atomic force microscopy (AFM), photoluminescence (PL), cathodoluminescence (CL), high-resolution x-ray diffraction (HRXRD), secondary-ion mass spectroscopy (SIMS), Hall effect, and Raman spectroscopy have been used to assess structural and electrical properties as a function of substrate offcut. Bulk GaN substrates with vicinal offcut between 0.5°and 1.4°are optimal with respect to surface roughness and dopant incorporation. AFM, PL, and CL show decreasing Mg incorporation with increasing offcut angle. Raman spectroscopy, used to analyze biaxial strain, confirms essentially strain-free heterostructure growth on vicinal substrates with offcut angles between 0.5°a nd 1.4°off [0001] toward ½1100. Aluminum (Al) incorporation in the Al xGa 1Àx N barrier assessed by Raman vibration is in excellent agreement with trends found by HRXRD.

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Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

Cited by 93 publications

References 18 publications

Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Doping of semiconductor nanowires

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

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