Orientation dependence of blistering in H-implanted Si

Zheng, Yanbing; Lau, S. S.; Höchbauer, T.; Misra, Amit; Verda, R.D.; He, Xi; Nastasi, M.; Mayer, J. W.

doi:10.1063/1.1334921

Cited by 66 publications

(48 citation statements)

References 17 publications

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“…Earlier results presented by Höchbauer et al 2 and Zheng et al 9 showed that the lattice damage produced by H ion implantation into Si results in the formation of an in-plane biaxial compressive ͑negative͒ stress. Höchbauer observed the correlation between the platelet and damage distribution 10,11 and proposed that the out-of-plane tensile strain zz that would accompany an in-plane compressive stress xx = yy , would be peaked at the location of maximum damage and that the strain assists in nucleating Si-H defects that evolve into H platelets.…”

Section: Tamzin Laffordmentioning

confidence: 94%

Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Nastasi

Höchbauer

Lee

et al. 2005

Applied Physics Letters

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H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum.

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Section: Tamzin Laffordmentioning

confidence: 94%

Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Nastasi

Höchbauer

Lee

et al. 2005

Applied Physics Letters

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“…This hypothesis is strengthened by previous studies on the effect the silicon wafer orientation has on surface blister formation kinetics. [155] The study showed, that in H-implanted silicon wafers of different crystal orientation, the surface blister formation kinetics are controlled by the number of Si-Si bonds, that need to be broken to form popped-off surface blisters.…”

Section: As-implantedmentioning

confidence: 99%

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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“…Recent work by Nastasi et al 6 showed that the platelet orientation in both H ion implanted and plasma hydrogenated Si could be explained by a Volmer-type nucleation model that accounted for the in-plane compressive stress that is present in the implanted material. 7,8 Since the stress in ion implanted materials results from radiation defects, it is unclear if the model proposed by Nastasi et al is also appropriate for situations where an external stress is introduced by other means. In this work, we explore platelet formation and surface exfoliation in plasma hydrogenated single crystalline Si where a region of plane-stress is introduced by a buried SiGe strain layer.…”

mentioning

confidence: 99%