Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N<sub>2</sub>/O<sub>2</sub>Plasma

Nose, Yohei; Nakamura, Terumi; Yoshimura, Takeshi; Ashida, Atsushi; Uehara, T.; Fujimura, Norifumi

doi:10.7567/jjap.52.01ac03

Cited by 5 publications

(1 citation statement)

References 31 publications

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“…By contrast, the Pt film was preferentially oriented along the (111) direction, as shown in figures 11 and 12. Previous studies showed that various parameters during film deposition, including ambient pressure, ambient gas, substrate temperature, and substrate orientation, can affect the orientation of deposited films, and that single-oriented films can be synthesized under specific conditions [32][33][34][35]. The film deposition conditions employed in this study (i.e.…”

Section: Discussionmentioning

confidence: 99%

Microstructural modification of metallic thin films via high-frequency alternating current treatment at room temperature

Gu,

Zhang,

Kimura

et al. 2023

J. Phys. D: Appl. Phys.

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This study comprehensively investigates the effects of high-frequency alternating current (AC) on the adhesion strength between metallic thin films and substrates as well as on the resistivity of metallic films. Under AC treatment at the optimal frequencies of 26, 37, and 38 MHz, the adhesion strengths of the Al, Cu, and Pt films to a substrate increase by 44.9%, 42.0%, and 101.8%, respectively, whereas their resistivities decrease by 22.6%, 38.4%, and 8.1%, respectively, at optimal frequencies of 30, 40, and 20 MHz. Microstructural characterization results show that the metallic films exhibit nanometer-scale crystal grains with numerous defects (i.e., disordered atoms). However, the application of high-frequency AC significantly reduces these defects and improves the crystallinity, thereby promoting adhesion enhancement and resistivity reduction. The different optimal frequencies of the Al, Cu, and Pt films are attributable to the different atomic weights and resistivities of the materials. The high-frequency AC method proposed herein is a highly efficient and energy-conserving technique with a maximum temperature increase of less than 7.1 °C. This study provides a promising alternative to conventional heat treatment methods for enhancing the reliability and durability of wiring in semiconductor components.

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Section: Discussionmentioning

confidence: 99%

Microstructural modification of metallic thin films via high-frequency alternating current treatment at room temperature

Gu,

Zhang,

Kimura

et al. 2023

J. Phys. D: Appl. Phys.

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Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure

et al. 2016

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Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 1%

Nose

Yoshimura

Ashida

et al. 2016

Journal of Applied Physics

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We propose a novel chemical vapor deposition (CVD) process of ZnO films involving a nonequilibrium N2 plasma generated near atmospheric pressure with small O2 concentration (O2%) below 1%. In the optical emission (OE) spectra of the plasma, OE lines corresponding to the NO-γ system (A2Σ+→X2Πγ+) were observed, despite the only introduced gases being N2 and O2; these vanish at an O2% of more than 1%. ZnO films were grown on a glass substrate placed in the plasma at a growth temperature of as low as 200 °C and at an O2% of below 1% in the presence of the NO-γ system. This plasma yielded almost the same growth rate for ZnO films as O2 plasma including atomic O radicals that are often observed in low-pressure O2 plasma, suggesting that some highly reactive oxidant was sufficiently generated in such a small O2%. ZnO films synthesized using this plasma exhibited excellent (0001) preferred orientation without other diffractions such as 101¯1 diffraction, and with an optical bandgap of 3.30 eV. Based on the analyses of the plasma and the exhaust gases, the coexistence state of NO-γ and O3 should be essential and useful for the decomposition and oxidation of Zn source material in the proposed CVD process.

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Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N₂/O₂Plasma

Cited by 5 publications

References 31 publications

Microstructural modification of metallic thin films via high-frequency alternating current treatment at room temperature

Microstructural modification of metallic thin films via high-frequency alternating current treatment at room temperature

Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure

Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 1%

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Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N2/O2Plasma

Cited by 5 publications

References 31 publications

Microstructural modification of metallic thin films via high-frequency alternating current treatment at room temperature

Microstructural modification of metallic thin films via high-frequency alternating current treatment at room temperature

Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure

Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 1%

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Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N₂/O₂Plasma