Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding

Bouregba, R.; Poullain, G.; Vilquin, Bertrand; Murray, H.

doi:10.1016/s0025-5408(00)00354-8

Cited by 75 publications

(38 citation statements)

References 21 publications

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“…If values range from 0 (non-oriented) to 1 (fully oriented). We induce a preferential orientation along 111 by the use of a TiO x layer on top of a typical Si-based substrate [11]. This produces similar Lotgering factors in both PZT and PLZT films, indicating that the texturing mechanisms in doped and non-doped PZT in the tetragonal phase must be similar.…”

Section: Resultsmentioning

confidence: 92%

“…To induce other preferential orientations the use of seeding layers or the change of the substrate choice is necessary. Among these methods, the introduction of an additional layer of TiO x , on which we grow the PZT films, results in a 111 preferential orientation [10,11]. The same TiO x layer plays a major role in the epitaxial growth of (001) PZT films on Pt(100)/MgO(100) [12].…”

Section: Introductionmentioning

confidence: 99%

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Local Piezoelectric Properties of Oriented PZT Based Ferroelectric Thin Films

et al. 2006

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A series of PZT based ferroelectric thin films obtained by multitarget sputtering with different preferential orientations are studied by piezoresponse force microscopy (PFM). The modification of the substrate by the deposition of an extra TiO x layer, and the use of MgO-based substrates instead of the usual Si-based ones, change the preferential orientation of the films. The results of the analysis of the local piezoelectric properties allow us to discuss the origin of some special features observed, like the appearance of protruding grains in films with specific orientations, and the homogeneity of the piezoelectric performance at the nanoscale.

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Section: Resultsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Local Piezoelectric Properties of Oriented PZT Based Ferroelectric Thin Films

et al. 2006

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“…A very thin TiO 2 upper layer was also deposited prior to PZT sputtering in order to achieve in-situ crystallization and to promote growth along the h1 1 1i directions [11,12]. Sputtering conditions used to achieve a good orientation control were determined previously [10,11,13]. Energy dispersive spectroscopy (EDS) analyses performed on all the films showed no significant difference in cationic composition.…”

Section: Methodsmentioning

confidence: 99%

Influence of the substrate on ferroelectric properties of 〈111〉 oriented rhombohedral Pb(Zr0.6Ti0.4)O3 thin films

Leclerc

Poullain

Bouregba

et al. 2009

Applied Surface Science

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“…Among them, Ti and TiN buffer layer could be of great importance. It has been reported that a thin Ti layer not only promotes the crystallization of perovskite (PZT) films by increasing the number of active sites for nucleation but also provides control over film texture [23]. On the other hand, TiN has attracted attention as they are known to be effective non-reactive diffusion barriers and holds good compatibility with PZT and NiTi in MEMS applications [24,25].…”

Section: Introductionmentioning

confidence: 99%