Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆

Davis, R. F.; Rahman, Abu Zayed Mohammad Saliqur

doi:10.1016/b978-0-12-803581-8.10522-3

Cited by 4 publications

(6 citation statements)

References 77 publications

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“…The enthalpies and free energies of the reaction and transition states when the internal rotations were treated as vibrations were compared to the energies obtained by correcting for the presence of rotations using the hindered-rotor approximation. 1 As seen in Fig. S2 the largest differences were found for the free energy at high temperatures, but the differences in both enthalpies and free energies were even so less than 3.5 kJ/mol.…”

Section: Supporting Information Tomentioning

confidence: 80%

“…Regardless of the application, one of the most popular methods used to deposit thin layers of 13-Ns is chemical vapor deposition (CVD), where typically trimethyl metal complexes (M(CH3)3, where M = Al, Ga or In) and ammonia (NH3) are used as group 13 and nitrogen precursors, respectively. 1 The reaction pathways of the trimethyl gallium (Ga(CH3)3)/NH3 system has been studied earlier, both experimentally and theoretically. 2,3,4,5,6,7 The studies show a complex gas phase chemistry where both Ga(CH3)3 and NH3 could decompose to more reactive species that could deposit on the surface or react in the gas phase to form species containing both gallium and nitrogen.…”

Section: Introductionmentioning

confidence: 99%

“…8,9,10 The formation of H2N-M(CH3)2 could contribute to the growth of GaN by deposition, but might be also detrimental to the CVD process by leading to the formation of parasitic nitride nanoparticles in the gas phase. 3,9,11,12,13 Despite the fact that CVD processes for 13-Ns have reached a level of maturity that allows them to be used for industrial production of 13-N based electronics, they typically require a very high NH3 /13 precursor ratio, typically 100-1000:1 for AlN and GaN 1 , and up to 10 5 :1 for InN 14 , reflecting poorly tuned CVD chemistry. From a purely thermodynamic point of view, NH3 will mainly decompose under deposition conditions to highly stable dinitrogen and dihydrogen via the reactive species NH2 and NH.…”

Section: Introductionmentioning

confidence: 99%

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Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

et al. 2019

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Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD. File list (2) download file view on ChemRxiv manuscript methylamines in GaN CVD-rev2.pdf (1.45 MiB) download file view on ChemRxiv Supporting information-rev2.pdf (1.16 MiB) Methylamines as nitrogen precursors in chemical vapor deposition of gallium nitride

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Section: Supporting Information Tomentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

et al. 2019

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“…The NH3 to metal precursor ratio is commonly 2000 times or greater, when depositing group 13 nitrides. 45 Hydrazine is more reactive than NH3, due to the α-effect, 46 but also highly toxic, explosive and requires special precautions for transport, storage, and handling.…”

Section: Non-metal Precursorsmentioning

confidence: 99%

Group 11–14 Triazenides : Synthesis, characterization, and thermal evaluation for use in chemical vapor deposition

Samii

2022

Linköping Studies in Science and Technology. Dissertations

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Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are corner-stone techniques for depositing thin films in semi-conductor manufacturing. To deposit semiconductor grade materials, these techniques rely on high-performance precursors. This thesis covers synthesis, characterization, and evaluation of 1,3-dialkyltriazenides of group 11-14 metals as precursors for CVD and ALD.Triazenides had previously not been used as precursors for ALD, nor any other CVD process. The gallium and indium triazenides were used for ALD of indium-and gallium nitride and yielded materials of superior quality over other precursors. The success of these precursors sparked subsequent investigation into triazenides of zinc, and the group 11-and 14 metals. These triazenides showed high volatility and thermal stability making them highly interesting as CVD and ALD precursors.

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“…where M = Al, Ga or In) and ammonia (NH 3 ) are used as group 13 and nitrogen precursors, respectively. 147 The reaction pathways of the trimethyl gallium (Ga(CH 3 ) 3 )/NH 3 system has been studied earlier, both experimentally and theoretically. [148][149][150][151][152][153] The studies show a complex gas phase chemistry where both where a M-N bond is formed with release of methane.…”

Section: Resultsmentioning

confidence: 99%

Design and development of group 13 precursors for improved vapour deposition of metal nitride thin films

Buttera¹

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Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆

Cited by 4 publications

References 77 publications

Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

Group 11–14 Triazenides : Synthesis, characterization, and thermal evaluation for use in chemical vapor deposition

Design and development of group 13 precursors for improved vapour deposition of metal nitride thin films

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