Organometal Halide Perovskite Artificial Synapses

Xu, Wentao; Cho, Himchan; Kim, Young Hoon; Wolf, Christoph; Park, Chan Gyung; Lee, Tae Woo

doi:10.1002/adma.201506363

Cited by 332 publications

(356 citation statements)

References 53 publications

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“…After the light stimulation, it also takes rather long time for the traps to release charge carriers and to reach the equilibrium device I DS in the dark. The I DS of the device is observed to increase when the second spike closely follows a previous spike, indicating the PAN‐DNTT‐OFET is able to emulate the paired‐pulse facilitation (PPF) behavior of synapses 41. Figure 7c exhibits that the PPF index (100% × (A2 − A1)/A1, where A1 and A2 are the heights of the first and second EPSC peaks in Figure 7b) decreases with increase of time interval (∆ t ).…”

Section: Resultsmentioning

confidence: 99%

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Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization

Chu

et al. 2017

Advanced Science

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Polymer dielectrics in organic field‐effect transistors (OFETs) are essential to provide the devices with overall flexibility, stretchability, and printability and simultaneously introduce charge interaction on the interface with organic semiconductors (OSCs). The interfacial effect between various polymer dielectrics and OSCs significantly and intricately influences device performance. However, understanding of this effect is limited because the interface is buried and the interfacial charge interaction is difficult to stimulate and characterize. Here, this challenge is overcome by utilizing illumination to stimulate the interfacial effect in various OFETs and to characterize the responses of the effect by measuring photoinduced changes of the OFETs performances. This systemic investigation reveals the mechanism of the intricate interfacial effect in detail, and mathematically explains how the photosensitive OFETs characteristics are determined by parameters including polar group of the polymer dielectric and the OSC side chain. By utilizing this mechanism, performance of organic electronics can be precisely controlled and optimized. OFETs with strong interfacial effect can also show a signal additivity caused by repeated light pulses, which is applicable for photostimulated synapse emulator. Therefore, this work enlightens a detailed understanding on the interface effect and provides novel strategies for optimizing OFET photosensory performances.

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Section: Resultsmentioning

confidence: 99%

“…Synapses are among the most important functional units of our brain which is an energy‐efficient and event‐driven information processing system, and can outperform supercomputers in many tasks 39, 40, 41. Photostimulated synapseemulator is also promising for brain‐inspired electronics and human–machine interface, etc 8.…”

Section: Resultsmentioning

confidence: 99%

Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization

Chu

et al. 2017

Advanced Science

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“…[37,38] In this study, we used vapor deposition which is compatible with conventional methods for silicon-wafer-based and thin-film solar cells; specifically, we used sequential vapor deposition to deposit uniform resistive switching layers into nanotemplates, and this method can be extended to CMOS-compatible processes owing to the possibility of depositing uniform thin films on large areas. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices. The CH 3 NH 3 PbI 3 -based nanoscale memory device shows low-voltage operation, good endurance, and long data retention.…”

mentioning

confidence: 99%

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

2017

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The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH NH PbI layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 s. Moreover, the use of sequential vapor deposition is extended to deposit CH NH PbI as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

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“…To be noted, as to the basement of memristive R S and R SH , namely the mechanism of the memristive property of hybrid perovskites, different reports have concluded various theories, such as charge carrier trapping/de-trapping by defects 17 , variation of the barrier on film interface 19 , low-resistance filament formation 18 and ion migration 22 . Thus it is still very controversial and further research is needed for determining the exact origin of the memristive property.…”

Section: Resultsmentioning

confidence: 99%

“…As to the specific memristive mechanism of hybrid perovskites, different reports have concluded various theories, such as charge carrier trapping/de-trapping by defects 17 , variation of the barrier on film interface 19 , low-resistance filament formation 18 and ion migration 22 ; thus further research is needed for determining the exact origin of the memristive property. To ensure the wide adaptability of the joint model and the deduced equation, a general physical model of memristor was intentionally involved in this research rather than a specific one.…”

Section: Discussionmentioning

confidence: 99%

Memristive property’s effects on the I–V characteristics of perovskite solar cells

Yan

Dong

Xiao

et al. 2017

Sci Rep

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The unfavorable I–V characteristics of perovskite solar cells (PSCs), such as the I–V hysteresis phenomena, have been one major obstacle for their future practical application. However, corresponding analysis based on traditional theories have shown non-negligible flaws and failed for satisfactory explanation. To present a novel mechanism, here we utilize for the first time the memristive property of the perovskite material to analyze the I–V characteristics of PSCs. The obtained joint physical model and the deduced equation may help solving the long-existent mysteries of the I–V characteristics of PSCs. On the basis of our analysis and memristor theory, we also propose an original device optimization strategy for PSCs, which may help further increase their performance to the limit.

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Organometal Halide Perovskite Artificial Synapses

Cited by 332 publications

References 53 publications

Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization

Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

Memristive property’s effects on the I–V characteristics of perovskite solar cells

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