Organolead trihalide perovskite as light absorber for IGZO phototransistor

Du, Songnan; Li, Gongtan; Wang, Yan; Liu, Chuan; Hiralal, Pritesh; Nie, Zan; Zhou, Hang

doi:10.1109/nems.2017.8017067

Cited by 1 publication

(5 citation statements)

References 16 publications

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“…The rising and falling times of the transient response were 349 and 337 ms, respectively. The performance of the device performance was comparable to or even better than that of several recently reported IGZO-based hybrid phototransistors with organolead halide perovskite, 2D semiconductors, and organic materials. − ,, …”

Section: Resultssupporting

confidence: 53%

“…With illumination and in the off-state, the photogenerated carriers in MAPbI 3 accumulated in the nanogaps and induced high electron concentration in the IGZO layer, in comparison with the negligibly small electron accumulation in the IGZO layer in the dark. Because of the energy barrier in the vertical heterojunction, the off-current of the phototransistor had low values (∼10 –9 A) under illumination, and hence the devices exhibited a higher on–off ratio than some phototransistors proposed in the literature. ,, …”

Section: Resultsmentioning

confidence: 96%

“…The performance of the device performance was comparable to or even better than that of several recently reported IGZO-based hybrid phototransistors with organolead halide perovskite, 2D semiconductors, and organic materials. [60][61][62][63]66,67 Compared with the non-nanostructured IGZO/MAPbI 3 phototransistor (shown in Figure S18), the nanostructured phototransistors exhibited smaller negative shift in I−V curves, much faster transient response, and much larger light-to-dark current ratio under periodic illumination. It has been reported that the migration of MA + ions during MAPbI 3 deposition is responsible for the negative shift in the phototransistors.…”

Section: Resultsmentioning

confidence: 99%

“…Because of the energy barrier in the vertical heterojunction, the off-current of the phototransistor had low values (∼10 −9 A) under illumination, and hence the devices exhibited a higher on− off ratio than some phototransistors proposed in the literature. 60,61,70…”

Section: Resultsmentioning

confidence: 99%

“…The light-to-dark current ratio is shown as a function of V G in Figure e and reached the maximum at 9346 ( V G = −12.5 V and V D = 10 V). Compared with stacking heterojunction phototransistors composed of similar materials, − the device with the proposed method exhibited a stable on–off ratio under illumination without significant degradation. In addition, in contrast to conventional heterojunction phototransistors, the asymmetrical structure achieved the unidirectional property; that is, it could be turned on only when the positive drain voltage was applied to the side of the heterojunction with the other electrode grounded as the source.…”

Section: Resultsmentioning

confidence: 99%

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Nanostructured High-Performance Thin-Film Transistors and Phototransistors Fabricated by a High-Yield and Versatile Near-Field Nanolithography Strategy

Huang

Chen

et al. 2019

ACS Nano

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Thin-film transistors (TFTs) and field-effect transistors (FETs) are basic units to build functional electronic circuits and investigate transport physics. In conventional TFTs or FETs, performance in terms of current level, on−off ratio, and the sensitivity of detection is limited by homogeneous semiconducting layers. In this paper, we develop TFTs with submicron heterostructures by using a strategy based on near-field photolithography. We use an array of totalreflective polydimethylsiloxane pyramids or trenches as a soft photomask in photolithography to induce multiple reflections and diffractions to focus the light. The textured feature enables the generation of gaps, dots, and grids at the nanoscale, with dimensions as small as sub-100 nm on substrates at the centimeter scale. We demonstrated the very high performance oxide TFTs on the nanoscale and periodic degenerately doped heterojunctions, and they yielded a nearly 20fold increase in transconductance and apparent device mobility. The on−off ratio was higher than 10 9 , with notably enhanced output current and clear scaling effect with channel length. We also built nanostructured wide-gap/narrow-gap heterojunctions to balance the high on−off ratio and sensitive photoresponse in a unidirectional phototransistor. This study shows the viability of programming a variety of nanoscale submicron patterns or interfaces in TFTs and FETs to significantly enlarge the scope of research on multifunctional TFTs and FETs.

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