Organic thin-film transistors using pentacene and SiOC film

Oh, Teresa

doi:10.1109/tnano.2005.858591

Cited by 43 publications

(12 citation statements)

References 17 publications

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“…This result was the same of IGZO reports as a previous paper [5]. However, to improve the transistor for transparent display applications, it is also necessary to develop the oxide semiconductor of p-type [7]. This work provides the correlation between the Schottky contact and PF contact in zinc oxide semiconductor transistor used on SiOC as a gate insulator.…”

Section: Introductionsupporting

confidence: 83%

Effects of Schottky Barrier in Low-k SiOC

2014

Trans. Mat. Res. Soc. Japan

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This letter discusses the reason for the tunneling behavior of zinc based oxide semiconductor thin film transistors (TFTs). The device was fabricated using SiOC as a gate dielectric, which decreased polarities depending on the combinations of oxygen and carbon ions as opposite polar sites. The threshold voltage shifts in a zinc based oxide semiconductor are presented using the metal oxide semiconductor (MOS) structure analysis of Ohmic/Schottky and Poole-Frenkel (PF) contacts based on the drain-source current (I DS ) and drain-source voltage (V DS ) with change of gate voltage. The transfer characteristic of TFTs and stability were influenced by the polarities of the SiOC gate insulator. The threshold voltage shift effect was explained by a slow trapping of excess carriers in defects located at the SiOC interface. A stable TFT prepared on non-polar SiOC was achieved from PF contact due to the very high height of Schottky barrier. The I DS -V DS curve including the Ohmic contact at V G =0V and Schottky barrier with increase of gate voltage exhibited a tunneling behavior induced by diffusion currents. However, for the TFTs on polar SiOC with the trap charge, it was observed the trapping phenomenon transited from the localized state to band through the low potential barrier SB. The excess charge carriers in a localized trap state caused the threshold voltage shifts.

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Section: Introductionsupporting

confidence: 83%

Effects of Schottky Barrier in Low-k SiOC

2014

Trans. Mat. Res. Soc. Japan

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“…These sites were recombined according to the balanced formation by the equilibrium of the repulsive and attractive forces during the deposition. The hydroxyl group was evaporated by the annealing and then decreased the dielectric constant of SiOC film [9]. They have been focused on the correlation between lowering the polarization and the reduction of the dielectric constant, but it is not clearly defined the effects about the ionic and electronic polarity witch is affected the reduction of the dielectric constant, respectively.…”

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confidence: 99%

Study on the correlation between dielectric constant and chemical shift in FTIR spectra of SiOC film by chemical vapor deposition after annealing

2010

Phys. Status Solidi (c)

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SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film had the main Si‐O‐C bond with the molecule vibration mode in the range of 930∼1230 cm‐1 which consists of C‐O and Si‐O bonds related to the cross link formation according to the dissociation and recombination. The C‐O bond originated from the elongation effect by the neighboring highly electronegative oxygen atoms at terminal C‐H bond in Si‐CH3 of 1270 cm‐1. However, the Si‐O bond was formed from the second ionic sites recombined after the dissociation of Si‐CH3 of 1270 cm‐1. Increment of Si‐O bond in the Si‐O‐C main bond contributed to increase the hardness and decrease the roughness because of the decreasing of the carbon content witch is related to the space effect. The dielectric constant of SiOC film was decreased by lowering the polarization which consists of the ionic and electronic polarity. Increment of Si‐O bond in a right shoulder at the main bond was interpreted by the red shift observed in FTIR spectra. Moreover, the increment of Si‐O bond and decrement of carbon content induced to decrease the ionic polarity and then decreased the dielectric constant. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…It has been known that the dielectric constant of SiOC film fabricated by CVD (chemical vapor deposition) decreases as the polarization of the film lowers. Moreover, it has been reported that SiOC as a gate insulator improves the performance of TFT [12]. The electron emission of the defects resulting from the localized deep level states in semiconductor band gap is associated with the ionization energy of the localized state in dielectric materials.…”

Section: Introductionmentioning

confidence: 99%

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

Kim²

2014

Transactions on Electrical and Electronic Materials

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Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RFpower influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

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Organic thin-film transistors using pentacene and SiOC film

Cited by 43 publications

References 17 publications

Effects of Schottky Barrier in Low-k SiOC

Effects of Schottky Barrier in Low-k SiOC

Study on the correlation between dielectric constant and chemical shift in FTIR spectra of SiOC film by chemical vapor deposition after annealing

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

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