Organic Single‐Crystal Semiconductor Films on a Millimeter Domain Scale

Kwon, Sooncheol; Kim, Jehan; Kim, Geunjin; Yu, Kilho; Jo, Yong‐Ryun; Kim, Bong‐Joong; Kim, Junghwan; Kang, Hongkyu; Park, Byoungwook; Lee, Kwang-Hee

doi:10.1002/adma.201502980

Cited by 64 publications

(70 citation statements)

References 28 publications

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“…The polymer‐assisted crystallization used to encounter weak van der Waals forces has been further demonstrated by the template‐mediated molecular crystal seed (TMCS) method. To control the nucleation dynamics in the heat‐transfer phase transition of a C8‐BTBT film, poly(4‐styrene sulfonic acid) (PSS) was incorporated into the supersaturated liquid solution, and strong electrostatic interactions occurred between C8‐BTBT and PSS composites . As shown in Figure c, the C8‐BTBT:PSS crystal film exhibited large single‐phase grains varying from 2000 to 3000 μm and a smooth surface morphology, while the C8‐BTBT film exhibited relatively small diameters ranging from 300 to 700 μm.…”

Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

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Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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“…Unfortunately, the invasive photolithography technology cannot be directly employed on the OSCCs. First, differing from inorganic semiconductors, organic molecules held together by weak van der Waals forces (<10 kcal mol −1 ) in crystals, and thus large‐area production of organic single‐crystalline films is hard to achieve . Second, most of the organic materials are unstable when exposed to organic solvents, high temperature, or strong ultraviolet light (UV) that typically used in photolithography processing .…”

Section: Introductionmentioning

confidence: 99%

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

Zhang

Deng

Jia

et al. 2019

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Development of high‐performance organic electronic and optoelectronic devices relies on high‐quality semiconducting crystals that have outstanding charge transport properties and long exciton diffusion length and lifetime. To achieve integrated device applications, it is a prerequisite to precisely locate the organic semiconductor crystals (OSCCs) to form a specifically patterned structure. Well‐patterned OSCCs can not only reduce leakage current and cross‐talk between neighboring devices, but also facilely integrate with other device elements and their corresponding interconnects. In this Review, general strategies for the patterning of OSCCs are summarized, and the advantages and limitations of different patterning methods are discussed. Discussion is focused on an advanced strategy for the high‐resolution and wafer‐scale patterning of OSCC by a surface microstructure‐assisted patterning method. Furthermore, the recent progress on OSCC pattern‐based integrated circuities is highlighted. Finally, the research challenges and directions of this young field are also presented.

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“…As shown, the on‐state drain current ( I DS ) for V GS ranging from 0 to −20 V decreases with increasing temperature for both devices. A change of temperature from room temperature to 90 °C has been reported to induce no significant effects on the charge transport mobility of C8‐BTBT35 nor on its crystalline structure 36. Consequently, we assumed that slight mechanical stresses induced by mismatches in the thermal expansion of the materials stacked within the device may be the origin of the degradation of the electrical characteristics.…”

Section: Thermally Stable Ofetmentioning

confidence: 99%

High and Temperature‐Independent Dielectric Constant Dielectrics from PVDF‐Based Terpolymer and Copolymer Blends

Thuau

Kallitsis

et al. 2020

Adv Elect Materials

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Relaxor ferroelectric polymers exhibit high k at their structural phase transition around room temperature. They are particularly attractive as gate dielectric in organic field effect transistor (OFET). Nevertheless, their applications are limited due to their low thermal stability. A polymer blend system with a high and thermally stable dielectric constant is demonstrated by mixing terpolymer poly(vinylidene fluoride‐trifluoroethylene‐chlorofluorethylene) P(VDF‐ter‐TrFE‐ter‐CFE) with copolymer poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐co‐TrFE). PVDF‐based blends of various compositions are characterized by dielectric spectroscopy, differential scanning calorimetry (DSC), infrared spectroscopy, small and wide angle X‐ray scattering (SAXS and WAXS), and atomic force microscopy (AFM) in order to investigate the relationship between morphology and crystallization of the blend and their dielectric properties. An optimized blend of P(VDF‐ter‐TrFE‐ter‐CFE) [55/37/8] and P(VDF‐co‐TrFE) [46/54] at a ratio of 70/30 is found to exhibit a quasi‐constant dielectric constant of 40 ± 2 over a wide temperature range (20–80 °C). Furthermore, electrical characteristics of the PVDF‐blend‐based gate dielectric OFET show further thermal stability in comparison to OFET based on high‐k terpolymer P(VDF‐ter‐TrFE‐ter‐CFE) [55/37/8]. An improvement of their drain current stability by up to 60% is demonstrated at 60 °C. These findings enable broader applications of fluoropolymers in organic electronics.

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Organic Single‐Crystal Semiconductor Films on a Millimeter Domain Scale

Cited by 64 publications

References 28 publications

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

High and Temperature‐Independent Dielectric Constant Dielectrics from PVDF‐Based Terpolymer and Copolymer Blends

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