2013
DOI: 10.1063/1.4827303
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Organic-silicon heterojunction solar cells: Open-circuit voltage potential and stability

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Cited by 103 publications
(112 citation statements)
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“…[ 12 ] More recently, they also have estimated a theoretical η of 25% with a high V oc of 700 mV by using a back-contact-junction solar-cell concept formed by a hole-collecting layer of PEDOT:PSS and an electron-collecting layer, although a high-temperature process at ≈800 ºC is still used for enhancing the back-surface fi eld. [ 13,14 ] markedly for PTSA/DMSO-treated PEDOT:PSS fi lms and it was almost identical before and after Ar * etching. These fi ndings suggest that the removal of PSS matrix occurs throughout the fi lm depth.…”
mentioning
confidence: 80%
“…[ 12 ] More recently, they also have estimated a theoretical η of 25% with a high V oc of 700 mV by using a back-contact-junction solar-cell concept formed by a hole-collecting layer of PEDOT:PSS and an electron-collecting layer, although a high-temperature process at ≈800 ºC is still used for enhancing the back-surface fi eld. [ 13,14 ] markedly for PTSA/DMSO-treated PEDOT:PSS fi lms and it was almost identical before and after Ar * etching. These fi ndings suggest that the removal of PSS matrix occurs throughout the fi lm depth.…”
mentioning
confidence: 80%
“…Applications to the front textured surface of silicon solar cells have recently led to Yang et al demonstrating open-circuit voltages (V oc ) of 634 mV and S of 100 cm/s [11] while Zhang et al have reported the same V oc of 634 mV applying the PEDOT:PSS passivating hole contact layer to the rear side of silicon-based solar cells [12]. In contrast, Schmidt et al have demonstrated better electronic properties for rear-passivated PEDOT:PSS solar cells, where an emitter saturation current density (J oe ) of 80 fA/cm 2 and an implied open-circuit voltage (iV oc ) of 690 mV have been reported [13], [14]. This was further improved by Zielke et al, who achieved J oe of 46 fA/cm 2 by optimizing the silicon surface treatment prior to the deposition of PEDOT:PSS [15].…”
mentioning
confidence: 98%
“…For more information, see http://creativecommons.org/licenses/by/3.0/ Chen et al demonstrating a high level of surface passivation by depositing just PSS, which after a short heat-treatment at 130°C for 10 min yields iV oc of 700-710 mV and S of 4-5 cm/s on nand p-type silicon [16]. While PEDOT: PSS and PSS films are promising approaches to contacting or passivating silicon, they do exhibit severe degradation under ambient conditions, and thus require capping films in order to inhibit degradation [13].…”
mentioning
confidence: 99%
“…形成背场, 在同样的面积上得到了 12.3%的效率 [65] . 在 金字塔上面刻蚀硅纳米线既可以增大结区的面积(如图 12), 用短的硅纳米线就可以获得很低的反射率, 硅纳米 线长度的减少能降低表面的复合区域, 这种结构的硅和 PEDOT:PSS 杂 化 器 件 的 效 率 也 达 到 了 10% ~ 12% [27,55,66] .…”
Section: 基于硅纳米线的杂化太阳能电池unclassified