2007
DOI: 10.2494/photopolymer.20.339
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Organic Monolayer Determination on Semiconductor Substrates

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Cited by 4 publications
(8 citation statements)
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“…Residue thickness from HfO 2 was half that of silicon, with SiO 2 showing the least amount of residue. The reduced residue result with SiO 2 aligns with previous results from photosensitive DBARC testing (7). To further explore the relationship between SiO 2 substrates and residue, the native oxide of a silicon wafer was mapped, then ARC ® DS-K101 coating was applied to the wafer and developed away.…”
Section: -Mm Proximity Bakedsupporting
confidence: 73%
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“…Residue thickness from HfO 2 was half that of silicon, with SiO 2 showing the least amount of residue. The reduced residue result with SiO 2 aligns with previous results from photosensitive DBARC testing (7). To further explore the relationship between SiO 2 substrates and residue, the native oxide of a silicon wafer was mapped, then ARC ® DS-K101 coating was applied to the wafer and developed away.…”
Section: -Mm Proximity Bakedsupporting
confidence: 73%
“…A linear trend resulted, indicating that increases in native SiO 2 produce less PDR. The proposal that a thick film of SiO 2 would decrease the surface silicon sites available for DBARC to bind to was previously proposed (7). This concept was supported by these results in that as the native oxide increases, it may become less and less ordered like pure silicon.…”
Section: -Mm Proximity Bakedmentioning
confidence: 66%
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“…A significant amount of research has gone into quantifying and understanding the trends of residue produced by different DBARCs. The residue has been quantified using ellipsometry, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) (9,18,19,20,21,22). Trends through processing conditions have also been evaluated.…”
Section: High-k Metal Gate (Hkmg) Processesmentioning
confidence: 99%
“…The chemistry components, thickness, and exposure dose all affected the post-develop residue (9,21,22). In both PS and non-PS DBARCs, it was found that the substrate also influenced the residue (19,20). With the diverse factors that are involved with residue, it is a challenge that will continue to garner focus, especially as HKMG processes move into production.…”
Section: High-k Metal Gate (Hkmg) Processesmentioning
confidence: 99%