2009
DOI: 10.1149/1.3096480
|View full text |Cite
|
Sign up to set email alerts
|

Residue Testing of Developer-Soluble Bottom Anti-Reflective Coatings

Abstract: Organic developer-soluble bottom anti-reflective coatings (DBARCs) are commonly used in the photolithographic process for implant and high-k/metal gate integration. They provide added reflectivity control over topography compared top anti-reflective coatings (TARCs). DBARCs are coated onto substrates and then removed during the develop step with the resist. Occasionally a thin post-develop residue (PDR) remains after the DBARC removal process. The main drivers of this residue are DBARC bake temperature, follow… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2010
2010
2011
2011

Publication Types

Select...
3

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(5 citation statements)
references
References 6 publications
0
5
0
Order By: Relevance
“…A significant amount of research has gone into quantifying and understanding the trends of residue produced by different DBARCs. The residue has been quantified using ellipsometry, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) (9,18,19,20,21,22). Trends through processing conditions have also been evaluated.…”
Section: High-k Metal Gate (Hkmg) Processesmentioning
confidence: 99%
See 2 more Smart Citations
“…A significant amount of research has gone into quantifying and understanding the trends of residue produced by different DBARCs. The residue has been quantified using ellipsometry, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) (9,18,19,20,21,22). Trends through processing conditions have also been evaluated.…”
Section: High-k Metal Gate (Hkmg) Processesmentioning
confidence: 99%
“…Trends through processing conditions have also been evaluated. For non-photosensitive DBARC, BARC bake temperature emerged as the biggest process control for residue (20). BARC bake temperature was also found to affect certain PS-DBARCs (18).…”
Section: High-k Metal Gate (Hkmg) Processesmentioning
confidence: 99%
See 1 more Smart Citation
“…The PDR left behind can limit the wet-etch or cleaning processes that follow. Again, preference for the non-PS DBARC or PS DBARC will depend on the substrate because the affinity for leaving PDR is driven by the substrate compatibility with the DBARC design and processing conditions (6,11).…”
Section: CD Profile and Pdrmentioning
confidence: 99%
“…Developing for long periods of time has an effect similar to lower bake temperatures and can produce undercut as shown in Figure 1a (4,5). So both bake temperature and develop time must be balanced to achieve optimum performance (6,7,8).…”
Section: Introductionmentioning
confidence: 99%