Organic Memory Devices Using C<sub>60</sub> and Insulating Polymer

Kanwal, Alokik; Paul, Shashi; Chhowalla, Manish

doi:10.1557/proc-830-d7.2

Cited by 20 publications

(29 citation statements)

References 7 publications

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“…First introduced by Kanwal et al (2005) at the Materials Research Society (MRS) conference in 2004, these devices also show the required characteristics for bistability and non-volatility. Subsequent devices studied by Majumdar et al (2005) showed that depending upon the concentration of C 60 , the devices exhibited either bistability or at higher concentrations WORM characteristics.…”

Section: Polymer Memory Devicesmentioning

confidence: 99%

Overview of organic memory devices

Paul

2009

Phil. Trans. R. Soc. A.

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The demand for more efficient and faster memory structures is greater today than ever before. The efficiency of memory structures is measured in terms of storage capacity and the speed of functioning. However, the production cost of such configurations is the natural constraint on how much can be achieved. Organic memory devices (OMDs) provide an ideal solution, in being inexpensive, and at the same time promising high performance. However, all OMDs reported so far suffer from multiple drawbacks that render their industrial implementation premature. This article introduces the different types of OMDs, discusses the progress in this field over the last 9 years and invokes conundrums that scholars of this field are currently faced with, such as questions about the charging mechanism and stability of devices, contradictions in the published work and some future directions.

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Section: Polymer Memory Devicesmentioning

confidence: 99%

Overview of organic memory devices

Paul

2009

Phil. Trans. R. Soc. A.

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“…Memory devices from organic materials have recently begun to receive attention. [2][3][4][5][6][7][8][9][10][11][12][13] Although there is a clear demand for next generation of nonvolatile solid state memories, the newcomer organic memory devices must exceed the existing speed and cost constraints of today's entrenched technologies. 3 In addition, the new technology must also meet other critical performance criteria such as long term data retention, low power consumption, and large number of rewrite cycles.…”

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confidence: 99%

Stable, three layered organic memory devices from C60 molecules and insulating polymers

Kanwal

Chhowalla

2006

Applied Physics Letters

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Memory devices based on C 60 fullerene molecules and polystyrene and poly 4-vinyl phenol polymers are described. It is shown that the bistability in the I-V characteristics can be used to perform read-write-erase memory functions. In addition, it is demonstrated that mild thermal annealing enhances the stability of the devices. Specifically, after annealing, the hysteresis in our devices can be preserved up to 85°C in 60% humidity. Furthermore, memory retention tests show that it is possible to preserve a state even after annealing at 85°C in 60% humidity for 30 min.

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“…105 ns. Here, it should be mentioned that both the response time and the equilibrium time of the current memory device are much faster than that (≈1 μs) of a NAND (NOT/AND) flash memory based on traditional semiconductors, and comparable to the current widely‐used dynamic random access memory (DRAM) and SRAM inorganic semiconducting memory devices (response time: <10 ns, access time: 60–100 ns or shorter) . The similar condition has occurred for 6F‐OCzTZ PI with a shorter equilibrium time of 85 ns.…”

Section: Resultsmentioning

confidence: 59%

Tuning Resistive Switching Memory Behavior from Non‐volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole‐Tethered Triazole Groups

Shi

Jia

Kong

et al. 2014

Macro Chemistry & Physics

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Two soluble functional aromatic polyimides (PIs), 6F-CzTZ PI and 6F-OCzTZ PI, are synthesized for memory device applications. The chemical structures of the 6F-CzTZ PI and 6F-OCzTZ PI are basically identical, with the only difference lying in the incorporation of phenoxy linkages in 6F-OCzTZ PI. However, vastly different memory behaviors are observed. The 6F-CzTZ PI displays a non-volatile write-once read-many times (WORM) memory effect with no polarity, while the 6F-OCzTZ PI exhibits volatile static random access memory (SRAM) characteristics and has polarity. Both the PIs exhibit good long-term operation stability, survive to 10 8 reading cycles with no current degradation, and show ultrafast switching with a response time less than 20 ns. The charge-transfer mechanisms and the roles of the donor and acceptor components in the PIs associated with the electrical switching effect are elucidated on the basis of the experimental and quantum simulation results.

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Organic Memory Devices Using C₆₀ and Insulating Polymer

Cited by 20 publications

References 7 publications

Overview of organic memory devices

Overview of organic memory devices

Stable, three layered organic memory devices from C60 molecules and insulating polymers

Tuning Resistive Switching Memory Behavior from Non‐volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole‐Tethered Triazole Groups

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Organic Memory Devices Using C60 and Insulating Polymer

Cited by 20 publications

References 7 publications

Overview of organic memory devices

Overview of organic memory devices

Stable, three layered organic memory devices from C60 molecules and insulating polymers

Tuning Resistive Switching Memory Behavior from Non‐volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole‐Tethered Triazole Groups

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Organic Memory Devices Using C₆₀ and Insulating Polymer