Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

Abstract

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors

“…On the other hand, the properties of these devices can be combined by forming a heterojunction between a good absorber that efficiently generates electron-hole pairs and high-mobility semiconductor to rapidly transport the carriers out of the device 19,28,36,37 . Organic BHJs and high-mobility organic heterostructures have been demonstrated for light-emitting transistors 38,39 , but no studies have been carried out on photodetectors such as phototransistors, to the best of our knowledge. The channel of our device (Fig.…”

Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field‐Effect Transistors

“…In this section, we will summarize the MHP‐FET investigations in the past several years and discuss the strategies to improve MHP‐FET performance. Besides, it can be referred to other review articles regarding the fundamental FET working principles and device configurations, such as bottom contact/top gate (BC/TG), bottom contact/bottom gate (BC/BG), and top contact/bottom gate (TC/BG) …”

“…The subsequent charge carrier transport along the semiconductor/dielectric interface can be significantly affected by the selection of suitable dielectric. In this regard, we also recommend the other review articles for detailed descriptions . As for MHP‐FETs in TG configuration, aforementioned polymer dielectrics, PMMA and Cytop, with perovskite‐orthogonal solvent seem to be the only suitable selection.…”

Assembly of π‐Conjugated Nanosystems for Electronic Sensing Devices

“…[10,16,17] So far, vast library of ad-hoc π-conjugated compounds have been applied for electronic devices and various "bottom up" approaches were developed to enhance their performances. [10,[18][19][20][21][22][23] However, it is noteworthy that an attractive nanoscale assembly strategy should be cheap, fast, defect tolerant, compatible with a variety of materials, parallel in nature, and ideally utilizing to corresponding electronic devices. [24] With regard to this scenario, this section will focus on the representative state-of-the-art protocols for super-molecule assembling of π-conjugated systems with above-mentioned merits, such strategies could be used to improving the qualities of various sensing devices.…”